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2SD1692 - NPN Transistor

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Description

Collector Emitter Sustaining Voltage : VCEO(SUS) = 100V(min.) DC Current Gain : hFE = 2000(Min.) @ IC= 1.5 A Complement to Type 2SB1149 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for gene

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Datasheet Details

Part number 2SD1692
Manufacturer INCHANGE
File Size 207.74 KB
Description NPN Transistor
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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = 100V(min.) ·DC Current Gain— : hFE = 2000(Min.) @ IC= 1.5 A ·Complement to Type 2SB1149 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 5 A 1.3 W 15 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1692 isc website：www.iscsemi.
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