2SD1354 Datasheet, Transistor, Toshiba

2SD1354 Features

• Transistor . High DC Current Gain : hFE=300(Max. ) (VcE=5V, Ic=0.5A) . Low Saturation Voltage : VC E(sat)=l-0V(Max.)(I C=3A, I B=0.3A) . High Power Dissipation : P C=30W (Tc=25 P C) . Complementar

PDF File Details

Part number:

2SD1354

Manufacturer:

Toshiba ↗

File Size:

89.17kb

Download:

📄 Datasheet

Description:

Silicon npn transistor.

2SD1354 Application

• Applications FEATURES . High DC Current Gain : hFE=300(Max. ) (VcE=5V, Ic=0.5A) . Low Saturation Voltage : VC E(sat)=l-0V(Max.)(I C=3A, I B=0.3A) .

TAGS

2SD1354

Toshiba

📁 Related Datasheet

2SD1350 - Silicon NPN Transistor (Panasonic Semiconductor)
Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching s Features q q q q q Unit: mm 2.4±0.2 2.

2SD1350A - Silicon NPN Transistor (Panasonic Semiconductor)
Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching s Features q q q q q Unit: mm 2.4±0.2 2.

2SD1351 - Silicon NPN Power Transistors (Inchange Semiconductor)
isc Silicon NPN Power Transistor 2SD1351 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector Power Dissipation- : PC= .

2SD1351 - NPN Complementary Silicon Power Transistors (Thinki Semiconductor)
2SD1351 ® 2SD1351 Pb Pb Free Plating Product NPN Complementary Silicon Power Transistors FEATURES z Complements the 2SB988. z Wide Safe Operatio.

2SD1352 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80(Min) ·Good Linearity of hFE ·Complement to Type 2SB.

2SD1353 - Silicon NPN Transistor (Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE 2SD1353 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . High DC Current Gain of 200 to 1200 at V CE=5V, Ic.

2SD1355 - Silicon NPN Transistor (Toshiba)
: SILICON NPN TRIPLE DIFFUSED TYPE ) POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES . High Breakdown Voltage : VCEO=100V . Low Collector Satura.

2SD1355 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1355 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 4A ·Collect.

2SD1356 - Silicon NPN Transistor (Toshiba)
: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1356 POWER AMPLIFIER APPLICATIONS. FEATURES . High Power Dissipation : P C=30W (Tc=25°C) . Good Linearity of h.

2SD1357 - Silicon NPN Transistor (Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) 2SD1357 2SD1358 I2SD1359 HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPL.