2SD1359 Datasheet - Toshiba

2SD1359 Silicon NPN Transistor

2SD1359 Features

* . High DC Current Gain: hFE=20O0(Min. ) (at VcE=3V, Ic=3A) . Low Saturation Voltage: VcE(sat)=l

* 5V(Max. ) (at Ic=3A) . Complementary to 2SB997, 2SB998, 2SB999 INDUSTRIAL APPLICATIONS Unit in mm , j.Q.3Mjg : MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SD13

2SD1359 Datasheet (116.66 KB)

2SD1359 Datasheet Preview — Preview of 2SD1359 PDF

Datasheet Details

Part number:

2SD1359

Manufacturer:

Toshiba ↗

File Size:

116.66 KB

Description:

Silicon npn transistor.

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2SD1359 Silicon NPN Transistor Toshiba

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