Datasheet4U Logo Datasheet4U.com

2SD1351 - Silicon NPN Power Transistors

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Collector Power Dissipation- : PC= 30W@ TC= 25℃ Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 2A, IB= 0.2A) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

📥 Download Datasheet

Datasheet preview – 2SD1351

Datasheet Details

Part number 2SD1351
Manufacturer Inchange Semiconductor
File Size 208.21 KB
Description Silicon NPN Power Transistors
Datasheet download datasheet 2SD1351 Datasheet
Additional preview pages of the 2SD1351 datasheet.

📁 Similar Datasheet

  • 2SD1351 - NPN Complementary Silicon Power Transistors (Thinki Semiconductor)
  • 2SD1350 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1350A - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1352 - NPN Transistor (INCHANGE)
  • 2SD1353 - Silicon NPN Transistor (Toshiba)
  • 2SD1354 - Silicon NPN Transistor (Toshiba)
  • 2SD1355 - Silicon NPN Transistor (Toshiba)
  • 2SD1355 - NPN Transistor (INCHANGE)
  • 2SD1356 - Silicon NPN Transistor (Toshiba)
  • 2SD1357 - Silicon NPN Transistor (Toshiba)
Other Datasheets by Inchange Semiconductor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor 2SD1351 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 2A, IB= 0.2A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.
Published: |