2SD1351 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SD1351 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). Collector Power Dissipation- : PC= 30W@ TC= 25℃. Low Collector Saturation Volt.

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Datasheet Specifications

Part number: 2SD1351
Manufacturer: Inchange Semiconductor
File Size: 208.21 KB
Datasheet: 2SD1351-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous Colle

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2SD1351 Silicon NPN Power Transistors Inchange Semiconductor

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