2SD1351 - Silicon NPN Power Transistors
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *Collector Power Dissipation- : PC= 30W@ TC= 25℃ *Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 2A, IB= 0.2A) *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
