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2SD1351 Datasheet - Inchange Semiconductor

2SD1351 Silicon NPN Power Transistors

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *Collector Power Dissipation- : PC= 30W@ TC= 25℃ *Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 2A, IB= 0.2A) *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

2SD1351-InchangeSemiconductor.pdf

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Part number:

2SD1351

Manufacturer:

Inchange Semiconductor

File Size:

208.21 KB

Description:

Silicon npn power transistors.

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2SD1351 2SD1351 Silicon NPN Power Transistors Inchange Semiconductor

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