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2SD1351

Silicon NPN Power Transistors

2SD1351 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)
*Collector Power Dissipation- : PC= 30W@ TC= 25℃
*Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ (IC= 2A, IB= 0.2A)
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

2SD1351 Datasheet (208.21 KB)

Preview of 2SD1351 PDF

Datasheet Details

Part number:

2SD1351

Manufacturer:

Inchange Semiconductor

File Size:

208.21 KB

Description:

Silicon npn power transistors.

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2SD1351 Silicon NPN Power Transistors Inchange Semiconductor

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