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2SD1352 - NPN Transistor

2SD1352 Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80(Min). Good Linearity of hFE. Complement to Type 2SB989. Minimum Lot-to-Lot variat.

2SD1352 Applications

* Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IE Emitter Current-Continuous 4 A

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Datasheet Details

Part number
2SD1352
Manufacturer
INCHANGE
File Size
204.58 KB
Datasheet
2SD1352-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1352-like datasheet