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2SD1355 - Silicon NPN Transistor

2SD1355 Description

: SILICON NPN TRIPLE DIFFUSED TYPE ) POWER AMPLIFIER APPLICATIONS.Unit in mm .

2SD1355 Features

* . High Breakdown Voltage : VCEO=100V . Low Collector Saturation Voltage : Vqj? (sat)=2.0Vttlax. . Complementary to 2SB995 . Recommended for 30W High Fidelity Audicd Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Ba

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Silicon NPN Transistor Toshiba
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