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2SD1355 Datasheet - Toshiba

2SD1355 Silicon NPN Transistor

2SD1355 Features

* . High Breakdown Voltage : VCEO=100V . Low Collector Saturation Voltage : Vqj? (sat)=2.0Vttlax. . Complementary to 2SB995 . Recommended for 30W High Fidelity Audicd Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Ba

2SD1355-Toshiba.pdf

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Datasheet Details

Part number:

2SD1355

Manufacturer:

Toshiba ↗

File Size:

82.59 KB

Description:

Silicon npn transistor.

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2SD1355 2SD1355 Silicon NPN Transistor Toshiba

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