Datasheet4U Logo Datasheet4U.com

2SD1355

Silicon NPN Transistor

2SD1355 Features

* . High Breakdown Voltage : VCEO=100V . Low Collector Saturation Voltage : Vqj? (sat)=2.0Vttlax. . Complementary to 2SB995 . Recommended for 30W High Fidelity Audicd Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Ba

2SD1355 Datasheet (82.59 KB)

Preview of 2SD1355 PDF

Datasheet Details

Part number:

2SD1355

Manufacturer:

Toshiba ↗

File Size:

82.59 KB

Description:

Silicon npn transistor.

📁 Related Datasheet

2SD1350 - Silicon NPN Transistor (Panasonic Semiconductor)
Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching s Features q q q q q Unit: mm 2.4±0.2 2.

2SD1350A - Silicon NPN Transistor (Panasonic Semiconductor)
Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching s Features q q q q q Unit: mm 2.4±0.2 2.

2SD1351 - Silicon NPN Power Transistors (Inchange Semiconductor)
isc Silicon NPN Power Transistor 2SD1351 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector Power Dissipation- : PC= .

2SD1351 - NPN Complementary Silicon Power Transistors (Thinki Semiconductor)
2SD1351 ® 2SD1351 Pb Pb Free Plating Product NPN Complementary Silicon Power Transistors FEATURES z Complements the 2SB988. z Wide Safe Operatio.

2SD1352 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80(Min) ·Good Linearity of hFE ·Complement to Type 2SB.

2SD1353 - Silicon NPN Transistor (Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE 2SD1353 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . High DC Current Gain of 200 to 1200 at V CE=5V, Ic.

2SD1354 - Silicon NPN Transistor (Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE 2SD1354 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . High DC Current Gain : hFE=300(Max. ) (VcE=5V, Ic=.

2SD1355 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1355 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 4A ·Collect.

TAGS

2SD1355 Silicon NPN Transistor Toshiba

Image Gallery

2SD1355 Datasheet Preview Page 2

2SD1355 Distributor