Datasheet Specifications
- Part number
- 2SD1355
- Manufacturer
- Toshiba ↗
- File Size
- 82.59 KB
- Datasheet
- 2SD1355-Toshiba.pdf
- Description
- Silicon NPN Transistor
Description
: SILICON NPN TRIPLE DIFFUSED TYPE ) POWER AMPLIFIER APPLICATIONS.Unit in mm .
Features
* . High Breakdown Voltage : VCEO=100V . Low Collector Saturation Voltage : Vqj? (sat)=2.0Vttlax. . Complementary to 2SB995 . Recommended for 30W High Fidelity Audicd Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Ba2SD1355 Distributors
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