* . High DC Current Gain: hFE=20O0(Min. ) (at VcE=3V, Ic=3A) . Low Saturation Voltage: VcE(sat)=l
* 5V(Max. ) (at Ic=3A) . Complementary to 2SB997, 2SB998, 2SB999 INDUSTRIAL APPLICATIONS Unit in mm , j.Q.3Mjg : MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SD13
2SD1357
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Silicon npn transistor.
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) 2SD1357 2SD1358 I2SD1359 HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPL.
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