* . High DC Current Gain: hFE=20O0(Min. ) (at VcE=3V, Ic=3A) . Low Saturation Voltage: VcE(sat)=l
* 5V(Max. ) (at Ic=3A) . Complementary to 2SB997, 2SB998, 2SB999 INDUSTRIAL APPLICATIONS Unit in mm , j.Q.3Mjg : MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SD13
2SD1357
116.66 KB
Silicon npn transistor.
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
2SD1357 2SD1358
I2SD1359
HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPL.
📁 Related Datasheet
2SD1350 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD1350, 2SD1350A
Silicon NPN triple diffusion planer type
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s Features
q q q q q
Unit: mm
2.4±0.2 2.
2SD1350A - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD1350, 2SD1350A
Silicon NPN triple diffusion planer type
For high breakdown voltage switching
s Features
q q q q q
Unit: mm
2.4±0.2 2.
2SD1351 - Silicon NPN Power Transistors
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
2SD1351
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
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: PC= .
2SD1351 - NPN Complementary Silicon Power Transistors
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2SD1351
®
2SD1351
Pb
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z Complements the 2SB988. z Wide Safe Operatio.
2SD1352 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
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2SD1353 - Silicon NPN Transistor
(Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE
2SD1353
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS.
FEATURES . High DC Current Gain of 200 to 1200 at V CE=5V, Ic.
2SD1354 - Silicon NPN Transistor
(Toshiba)
SILICON NPN TRIPLE DIFFUSED TYPE
2SD1354
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS.
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2SD1355 - Silicon NPN Transistor
(Toshiba)
:
SILICON NPN TRIPLE DIFFUSED TYPE
)
POWER AMPLIFIER APPLICATIONS.
Unit in mm
FEATURES . High Breakdown Voltage : VCEO=100V . Low Collector Satura.
