2SD1336 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor 2SD1336 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min). High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 4V. High Speed Switching.

📥 Download Datasheet

2SD1336 Datasheet Preview — Preview of 2SD1336 PDF

Datasheet Specifications

Part number: 2SD1336
Manufacturer: Inchange Semiconductor
File Size: 213.00 KB
Datasheet: 2SD1336_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* High power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Collector Po

2SD1336 Distributors

📁 Related Datasheet

2SD133 2SD1330 2SD130 2SD1300 2SD1301 2SD1302

📌 All Tags

2SD1336 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1336-like datasheet