Datasheet Details
| Part number | 2SD1336 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.00 KB |
| Description | Power Transistor |
| Datasheet |
 2SD1336_InchangeSemiconductor.pdf
|
| Part number | 2SD1336 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.00 KB |
| Description | Power Transistor |
| Datasheet |
2SD1336_InchangeSemiconductor.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) High DC Current Gain : hFE= 1500(Min) @ IC= 5A, VCE= 4V High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continu
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