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2SD1314 Silicon NPN Transistor

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Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1314 .
High DC Current Gain :hFE= 100(Min) @ IC= 15A. Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 450V (Min). Fast Switching Speed. Lo.

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Datasheet Specifications

Part number
2SD1314
Manufacturer
Inchange Semiconductor
File Size
187.15 KB
Datasheet
2SD1314-InchangeSemiconductor.pdf
Description
Silicon NPN Transistor

Applications

* Designed for high power switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICM Collector Current-peak IB Base Current PC Collector

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