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2SD1314 - Silicon NPN Transistor

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Description

High DC Current Gain :hFE= 100(Min) @ IC= 15A Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 450V (Min) Fast Switching Speed Low Collector-Emitter Saturation Voltage- :VCE(sat)= 2.0V (Max) @ IC= 15A Minimum Lot-to-Lot variations for robust device performance and reliable

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Datasheet Details

Part number 2SD1314
Manufacturer Inchange Semiconductor
File Size 187.15 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1314 Datasheet
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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1314 DESCRIPTION ·High DC Current Gain :hFE= 100(Min) @ IC= 15A ·Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 450V (Min) ·Fast Switching Speed ·Low Collector-Emitter Saturation Voltage- :VCE(sat)= 2.0V (Max) @ IC= 15A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power switching and motor control applications.
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