Datasheet4U Logo Datasheet4U.com

2SD1340 - Silicon NPN Transistor

Datasheet Summary

Description

High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for horizontal output applications.

📥 Download Datasheet

Datasheet preview – 2SD1340

Datasheet Details

Part number 2SD1340
Manufacturer Inchange Semiconductor
File Size 205.49 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1340 Datasheet
Additional preview pages of the 2SD1340 datasheet.

📁 Similar Datasheet

  • 2SD1341P - NPN Transistor (Sanyo Semicon Device)
  • 2SD1344 - NPN Transistor (INCHANGE)
  • 2SD1344 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1347 - NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD1348 - NPN Transistor (INCHANGE)
  • 2SD1348 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD1348 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1349 - NPN Darlington Transistor (Shindengen Electric Mfg.Co.Ltd)
  • 2SD130 - NPN Transistor (INCHANGE)
  • 2SD1300 - NPN Transistor (INCHANGE)
Other Datasheets by Inchange Semiconductor

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor 2SD1340 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 3.5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 10 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
Published: |