2SD1340 Silicon NPN Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SD1340 .
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. Built-in Damper Diode. Minimum Lot-to-Lot variations for robust de.

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Datasheet Specifications

Part number: 2SD1340
Manufacturer: Inchange Semiconductor
File Size: 205.49 KB
Datasheet: 2SD1340-InchangeSemiconductor.pdf
Description: Silicon NPN Transistor

Applications

* Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 3.5 A ICP Collector Current-Pul

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2SD1340 Silicon NPN Transistor Inchange Semiconductor

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