2SD1360 - Silicon NPN Transistor
2SD1360 Features
* . High DC Current Gain : h FE=600(Min. ) (at VCE=2V, Ic=2A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm 1G3MAX. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage V
