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2SD1360 Datasheet - Toshiba

2SD1360 Silicon NPN Transistor

2SD1360 Features

* . High DC Current Gain : h FE=600(Min. ) (at VCE=2V, Ic=2A) . Monolithic Construction with Built-in Base-Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm 1G3MAX. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 600 V Collector-Emitter Voltage V

2SD1360-Toshiba.pdf

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Datasheet Details

Part number:

2SD1360

Manufacturer:

Toshiba ↗

File Size:

98.18 KB

Description:

Silicon npn transistor.

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2SD1360 2SD1360 Silicon NPN Transistor Toshiba

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