2SD1365 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1365 .
High Collector-Base Voltage : V(BR)CBO= 800V(Min). Low Collector Saturation Voltage- : VCE(sat)= 1. High Speed Switching.

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Datasheet Specifications

Part number: 2SD1365
Manufacturer: INCHANGE
File Size: 196.76 KB
Datasheet: 2SD1365-INCHANGE.pdf
Description: NPN Transistor

Applications

* Switching regulators
* Motor control systems.
* Power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM

2SD1365 Distributors

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2SD1365 NPN Transistor INCHANGE

INCHANGE 2SD1365-like datasheet