Datasheet4U Logo Datasheet4U.com

2SD1365 - NPN Transistor

2SD1365 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1365 .
High Collector-Base Voltage : V(BR)CBO= 800V(Min). Low Collector Saturation Voltage- : VCE(sat)= 1. High Speed Switching.

2SD1365 Applications

* Switching regulators
* Motor control systems.
* Power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A ICM

📥 Download Datasheet

Preview of 2SD1365 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD1365
Manufacturer
INCHANGE
File Size
196.76 KB
Datasheet
2SD1365-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD1360 - Silicon NPN Transistor (Toshiba)
  • 2SD1361 - Silicon NPN Transistor (Toshiba)
  • 2SD1362 - Silicon NPN Transistor (Toshiba)
  • 2SD1363 - Silicon NPN Transistor (Toshiba)
  • 2SD1366 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1366A - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1367 - Silicon NPN Transistor (Hitachi Semiconductor)
  • 2SD1368 - Silicon NPN Transistor (Hitachi Semiconductor)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD1365-like datasheet