2SD362
INCHANGE
207.52kb
Npn transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 70V(Min) *Collector Power Dissipation- : PC= 40W(Max)@ TC= 25℃ *Minimum Lot-to-Lot
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SavantIC Semiconductor
Product Specification
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DESCRIPTION ·With TO-220C package ·Collector-base voltage: VCBO=.
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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Collector Power Dissipation-
: PC= 40W(Max).
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isc Silicon NPN Power Transistor
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
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..
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
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DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V (Min) ·High.
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(Inchange Semiconductor)
isc Silicon NPN Power Transistor
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DESCRIPTION ·High Collector-Emitter Sustaining Voltage-
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isc Silicon NPN Power Transistor
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2SD313 - NPN Transistor
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 2SD313
NPN EPITAXIAL PLANAR TRANSISTOR
DESCRIPTION
The UTC 2SD313 is designed for use in general purpose amplifier and .
