02N60S5 Datasheet | Specifications & PDF Download

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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SPN02N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated www.DataSheet4

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

(21 views)

SPN02N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated www.DataSheet4

(21 views)

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate

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isc N-Channel MOSFET Transistor SPD02N60S5,ISPD02N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3Ω ·Enhancement mode: ·100% avalanche t

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isc N-Channel MOSFET Transistor SPP02N60S5，ISPP02N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3Ω ·Enhancement mode ·Fast Switching S

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v

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Isc N-Channel MOSFET Transistor SPB02N60S5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·

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