SPN02N60S5 Cool MOSâ„¢ Power Transistor Feature â€.
SPD02N60S5 - Cool MOS Power Transistor
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate.SPP02N60S5 - Power Transistor
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate.02N60S5 - SPN02N60S5
SPN02N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated www.DataSheet4.SPN02N60S5 - Power Transistor
SPN02N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated www.DataSheet4.SPB02N60S5 - Cool MOS Power Transistor
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate.SPU02N60S5 - Power Transistor
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate.SPB02N60S5 - N-Channel MOSFET
Isc N-Channel MOSFET Transistor SPB02N60S5 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·.SPU02N60S5 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v.SPD02N60S5 - N-Channel MOSFET
isc N-Channel MOSFET Transistor SPD02N60S5,ISPD02N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3Ω ·Enhancement mode: ·100% avalanche t.SPP02N60S5 - N-Channel MOSFET
isc N-Channel MOSFET Transistor SPP02N60S5,ISPP02N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3Ω ·Enhancement mode ·Fast Switching S.