1.2GHz Datasheet | Specifications & PDF Download

CHA2092b RoHS COMPLIANT 18-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2092 is a high gain broadband three-stage monol

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CXA1787N 2GHz-band PLL IC for Mobile Communications Descriptions The CXA1787N is a frequency synthesizer PLL IC developed for use in mobile communicat

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MLA-01122B-C4 1 - 12 GHz Packaged Low-Noise MMIC Amplifier FEATURES • Wideband: • NF: 1.0 to 12 GHz 1.3 dB @ 2.0 GHz 1.4 dB @ 6.0 GHz 1.9 dB @ 12.0

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MMA155PP5 DC–22 GHz 32dBm Distributed Power Amplifier Product Overview MMA155PP5 is a gallium arsenide (GaAs) monolithic microwaveintegrated circui

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AC3236W 0.2GHz to 1GHz 4W Power Amplifier Features 200~1000MHz Frequency Range 3.3V~5.0V Operation 32dB Gain 36dBm P1dB @VCC=5V 250mA Quiescent Curre

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AMMP-6430 27-32 GHz 0.5W Power Amplifier in SMT Package www.DataSheet4U.com Data Sheet Description The AMMP-6430 MMIC is a broadband 1W power ampl

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RFUV1003 RFUV1003 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND I N/C N/C GND Q N/C 32 N/C GND LOIN G

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CHA6105 RoHS COMPLIANT 8-12GHz Driver Amplifier GaAs Monolithic Microwave IC Description The CHA6105 is a monolithic three-stage medium power amplifi

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CHA2110-98F 7-12GHz LNA GaAs Monolithic Microwave IC Description The CHA2110-98F is a monolithic two-stage wide band low noise amplifier circuit. I

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CHA3024-99F 2-22GHz LNA with AGC GaAs Monolithic Microwave IC Description The CHA3024-99F is a distributed Low Noise Amplifier with Adjustable Gain

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RFPA2226 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA2226 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN Features  P1dB=33.5dBm at 5V, 2.4GHz  802

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MMA051PP45 Datasheet DC–22 GHz 1W GaAs MMIC pHEMT Distributed Power Amplifier MMA051PP45 DC–22 GHz 1W GaAs MMIC pHEMT Distributed Power Amplifier Mi

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CHM1291 25-32GHz Single Side Band Mixer GaAs Monolithic Microwave IC Description The CHM1291 is a multifunction chip (MFC) which integrates a LO buffe

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RF Low Noise FET CE3514M4 12GHz LoEwnteNroaiSsheoFrtEDTociunmDeunta/TlitMleoNladmPelHaesrteic PKG DESCRIPTION  Low Noise and High Gain  Original Du

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RF Low Noise FET CE3512K2 12 GHz Super Low Noise FET in Hollow Plastic PKG DESCRIPTION  Super Low Noise and High Gain  Hollow (Air Cavity) Plastic

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BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • C

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