1.2GHz Datasheet | Specifications & PDF Download

AC3236W 0.2GHz to 1GHz 4W Power Amplifier Features 200~1000MHz Frequency Range 3.3V~5.0V Operation 32dB Gain 36dBm P1dB @VCC=5V 250mA Quiescent Curre

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Features nn Upconversion or Downconversion nn High IIP3: +24.4dBm at 5.8GHz +21.4dBm at 9GHz nn 7.1dB Conversion Loss at 5.8GHz nn +15.2dBm Input P1

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RFUV1003 RFUV1003 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND I N/C N/C GND Q N/C 32 N/C GND LOIN G

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RF Low Noise FET CE3512K2 12 GHz Super Low Noise FET in Hollow Plastic PKG DESCRIPTION  Super Low Noise and High Gain  Hollow (Air Cavity) Plastic

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NBB-312 0 Typical Applications • Narrow and Broadband Commercial and Military Radio Designs • Linear and Saturated Amplifiers Product Description The

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MMA155PP5 DC–22 GHz 32dBm Distributed Power Amplifier Product Overview MMA155PP5 is a gallium arsenide (GaAs) monolithic microwaveintegrated circui

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CMD295C4 ® 2-20 GHz Driver Amplifier Product Overview The CMD295C4 is a wideband driver amplifier housed in a leadless surface mount package ideall

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RF Low Noise FET CE3514M4 12GHz LoEwnteNroaiSsheoFrtEDTociunmDeunta/TlitMleoNladmPelHaesrteic PKG DESCRIPTION  Low Noise and High Gain  Original Du

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www.DataSheet4U.com LMH6703 1.2 GHz, Low Distortion Op Amp with Shutdown May 2005 LMH6703 1.2 GHz, Low Distortion Op Amp with Shutdown General Desc

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Features nn Upconversion or Downconversion nn High IIP3: +28.2dBm at 5.8GHz +22.8dBm at 12GHz nn 8.0dB Conversion Loss at 5.8GHz nn +14.3dBm Input P

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MMA051PP45 Datasheet DC–22 GHz 1W GaAs MMIC pHEMT Distributed Power Amplifier MMA051PP45 DC–22 GHz 1W GaAs MMIC pHEMT Distributed Power Amplifier Mi

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FEATURES ► Broadband RxVGA interfacing LNA and beamformer to RF ADC ► Operating frequency range: 0.38 GHz to 12 GHz, two product variants ► ADL6332-A:

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CMD290 ® 2-26 GHz GaN Low Noise Amplifier Product Overview The CMD290 is a wideband GaN MMIC distributed low noise amplifier die which operates fro

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CHA2092b RoHS COMPLIANT 18-32GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2092 is a high gain broadband three-stage monol

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FUJITSU SEMICONDUCTOR DATA SHEET ASSP Single Serial Input PLL Frequency Synthesizer On-chip 1.2 GHz Prescaler MB15E03SL DS04-21359-4E s DESCRIPTION

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U U FEATURES ■ Single 1.8V to 5.25V Supply ■ Direct IQ Modulator with Integrated 90° Phase Shifter* ■ Four Step RF Power Control ■ 120MHz Modulation

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AWB51D9 AWB51D9 Data Sheet 1.2 GHz CATV Push-pull Amplifier MMIC 1. Product Overview 1.1 Features • 50 ~ 1200 MHz Bandwidth • 21.5 dB Gain at 500 MHz

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BFR 92P NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • C

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