1.43-inch Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor BD243/A/B/C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB8743，IIRLB8743 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.2mΩ ·Enhancement

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB7437，IIRFB7437 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.0mΩ ·Enhancement

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF543 ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4368，IIRFP4368 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.85mΩ ·Enhancement

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·DC Current Gain- : hFE= 50(Min)@ IC= 3A ·Co

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isc N-Channel MOSFET Transistor 2SK3431 FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Res

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2943 ·FEATURES ·With TO-220F packaging ·High speed switching ·Easy to use ·100% avalanche

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isc P-Channel MOSFET Transistor IRLR9343,IIRLR9343 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤105mΩ ·Enhancement mode: ·100% avalanche te

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isc Silicon NPN Power Transistor BD243/A/B/C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4332，IIRFP4332 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤33mΩ ·Enhancement mo

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·The device employs the popular

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isc N-Channel MOSFET Transistor IRFB4321，IIRFB4321 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤15mΩ ·Enhancement mode ·Fast Switching Spe

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isc N-Channel MOSFET Transistor IRFB4332，IIRFB4332 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤33mΩ ·Enhancement mode ·Fast Switching Spe

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isc N-Channel MOSFET Transistor 2SK3435 FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Res

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isc N-Channel MOSFET Transistor 2SK3430-S FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-R

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C141-E057-02EN MHE2064AT, MHE2043AT MHF2043AT, MHF2021AT DISK DRIVE PRODUCT MANUAL FOR SAFE OPERATION Handling of This Manual This manual contains im

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isc Silicon PNP Power Transistor INCHANGE Semiconductor BD343 DESCRIPTION ·Excellent Safe Operating Area ·High DC Current Gain- : hFE=15-100(Min)@IC

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isc N-Channel MOSFET Transistor 2SK3430 FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Res

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isc Silicon NPN Power Transistor 2SD743 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 40~200 @IC=

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