.
Inchange Semiconductor
BD243 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor BD243/A/B/C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS).
Inchange Semiconductor
2SA1943 - POWER TRANSISTOR
isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-.
Inchange Semiconductor
BD243C - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor BD243/A/B/C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS).
INCHANGE
IRLR7843 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IRLR7843, IIRLR7843 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3.3mΩ ·Enhancement mode: ·100% avalanche t.
INCHANGE
TTA1943 - PNP Transistor
isc Silicon PNP Power Transistor INCHANGE Semiconductor TTA1943 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Compl.
INCHANGE
IRFP4332 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4332，IIRFP4332 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤33mΩ ·Enhancement mo.
INCHANGE
IRFP4368 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4368，IIRFP4368 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.85mΩ ·Enhancement .
INCHANGE
FJA4310 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·DC Current Gain- : hFE= 50(Min)@ IC= 3A ·Co.
Inchange Semiconductor
IRFB4310 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB4310， IIRFB4310 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤7.0mΩ ·Enhancement.
INCHANGE
IRFB4321 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IRFB4321，IIRFB4321 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤15mΩ ·Enhancement mode ·Fast Switching Spe.
INCHANGE
2SK2943 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2SK2943 ·FEATURES ·With TO-220F packaging ·High speed switching ·Easy to use ·100% avalanche .
INCHANGE
IRFS4321 - N-Channel MOSFET
Isc N-Channel MOSFET Transistor IRFS4321 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10.
INCHANGE
IRLB8743 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB8743，IIRLB8743 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤3.2mΩ ·Enhancement .
INCHANGE
IRFSL4321 - N-Channel MOSFET
Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test.
Hewlett-Packard
HP5082-7760 - 7.6mm (0.3 inch)/10.9mm (0.43 inch) Seven Segment Display
7.6 mm (0.3 inch)/10.9 mm (0.43 inch) Seven Segment Displays Technical Data 5082-761X Series 5082-762X Series 5082-765X Series 5082-766X Series 5082-.
Inchange Semiconductor
BD243A - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor BD243/A/B/C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS).
Inchange Semiconductor
2N4348 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·The device employs the popular.
Inchange Semiconductor
KTC4370 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) ·Complement to Type KTA1659 ·Minimum Lot-to-Lo.
Agilent
5082-7740 - 7.6mm (0.3 inch)/10.9mm (0.43 inch) Seven Segment Display
7.6 mm (0.3 inch)/10.9 mm (0.43 inch) Seven Segment Displays Technical Data 5082-761X Series 5082-762X Series 5082-765X Series 5082-766X Series 5082-.
Inchange Semiconductor
BD435 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistor BD435 DESCRIPTION ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 32V(Min) ·Complement to type BD436 ·Minimum .
