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IRFP4368 - N-Channel MOSFET

IRFP4368 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4368,IIRFP4368 *.

IRFP4368 Features

* Static drain-source on-resistance: RDS(on)≤1.85mΩ
* Enhancement mode: Vth =2.0 to 4.0 V (VDS=VGS, ID=250μA)
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* High Efficiency Synchronous Rectification in SM

IRFP4368 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
IRFP4368
Manufacturer
INCHANGE
File Size
239.75 KB
Datasheet
IRFP4368-INCHANGE.pdf
Description
N-Channel MOSFET

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