IRFP4368PBF Datasheet - International Rectifier

IRFP4368PBF HEXFET Power MOSFET

PD - 97322 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability S 75V 1.46mΩ 1.85mΩ 350Ac 195A D D G S TO-.

IRFP4368PBF Features

* s , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceede

IRFP4368PBF Datasheet (305.33 KB)