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MB10F - SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS
MOSPEC MB05F Thru MB10F .157(4.0) .142(3.6) .043(1.1) .027(0.7) .276(7.0) .260(6.6) SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES ●Rati.GS7103 - 3A Ultra Low Dropout Linear Regulator
3A Ultra Low Dropout Linear Regulator Features Maximum 3A Low-Dropout Voltage Regulator Ultra Low Dropout Voltage Typically 220mV at 3A Output Cur.SLC1012C - LED Backlight Driving Boost Switch
FAN7340 — LED Backlight Driving Boost Switch July 2013 FAN7340 LED Backlight Driving Boost Switch Features Single-Channel Boost LED Switch Inte.STM32F103C8T6 - ARM-based 32-bit MCU
STM32F103x8 STM32F103xB Medium-density performance line ARM®-based 32-bit MCU with 64 or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 com. interfaces D.HV320WHB-N10 - LCD
SPEC. NUMBER S863-8B013 PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE XINSHENG AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN.ABS10 - SINGLE PHASE 0.8AMP SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Technical Data Data Sheet N1693, Rev. A ABS2 THRU ABS10 ABS2 THRU ABS10 SINGLE PHASE 0.8AMP SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER ABS Fe.D1047 - NPN Transistor
2SD1047 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized.BTA100-800B - Specially Varieties 4Q-Triacs
100A 【】 BTA100 Series Specially Varieties 4Q-Triacs :NPNPN,,; :;、;、。 :、、、、、、;。 Part Number BTA100-600B BTA100-800B BTA100-1000B BTA100-1200B B.RTL8111H - INTEGRATED 10/100/1000M ETHERNET CONTROLLER
RTL8111H-CG RTL8111HS-CG INTEGRATED 10/100/1000M ETHERNET CONTROLLER FOR PCI EXPRESS APPLICATIONS DATASHEET (CONFIDENTIAL: Development Partners Only) .CW1073 - 6-7 Battery protection
www.cellwise-semi.com Features ÿOvercharge detection function • Threshold range 3.750V, 4.175V~4.450V, 25mV step, ± 25mV accuracyÿOverdischarge detect.NS4110B - Dual Mode Audio Power Amplifier
SHENZHENNSIWAYTECHNOLOGY NS4110B Oct.2018 V1.0 NS4110B 18W AB/D 1 :6V-14V : 7W(CLASS D,7.4V/4Ω,THD=10%) 10W(CLASS D,9V/4Ω,THD=10%) 18W(CLAS.STP110N7F6 - N-CHANNEL POWER MOSFET
STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RD.K10A60W - Silicon N-Channel MOSFET
MOSFETs Silicon N-Channel MOS (DTMOS) TK10A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON).LSC320AN10 - LCD Module
Product Specification ( √ ) Preliminary Specification ( ) Approval Specification The information described in this specification is preliminary and c.E810F - S.Q. Tube
page 1 2 3 4 5 6 7 8 9 E810F sheet 1 2 3 4 5 6 7 8 FP date 1968.12 1968.12 1968.12 1968.12 1968.12 1968.12 1968.12 1968.12 2000.12.10 .IRF3710 - N-Channel MOSFET Transistor
isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF3710 ·FEATURES ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·St.A1013 - 2SA1013
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013 Color TV Verttical Deflection Output Applications Power Switching Applications 2S.AON7410 - 30V N-Channel MOSFET
AON7410 30V N-Channel MOSFET General Description The AON7410 uses advanced trench technology and design to provide excellent RDS(ON) with low gate ch.IP5310 - Integrated USB TYPE-C Power-Bank System-On-Chip
IP5310 Integrated USB TYPE-C Power Bank System-On-Chip with 3A charger, 3.1A discharger 1. Features Switch buck charger and boost 3A Synchronou.