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10-W datasheet

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MOSPEC

MB10F - SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS

MOSPEC MB05F Thru MB10F .157(4.0) .142(3.6) .043(1.1) .027(0.7) .276(7.0) .260(6.6) SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS FEATURES ●Rati.
4.0 · rating-4rating-4rating-4rating-4
GStek

GS7103 - 3A Ultra Low Dropout Linear Regulator

3A Ultra Low Dropout Linear Regulator Features  Maximum 3A Low-Dropout Voltage Regulator  Ultra Low Dropout Voltage Typically 220mV at 3A Output Cur.
4.0 · rating-4rating-4rating-4rating-4
Fairchild Semiconductor

SLC1012C - LED Backlight Driving Boost Switch

FAN7340 — LED Backlight Driving Boost Switch July 2013 FAN7340 LED Backlight Driving Boost Switch Features  Single-Channel Boost LED Switch  Inte.
3.0 · rating-3rating-3rating-3
STMicroelectronics

STM32F103C8T6 - ARM-based 32-bit MCU

STM32F103x8 STM32F103xB Medium-density performance line ARM®-based 32-bit MCU with 64 or 128 KB Flash, USB, CAN, 7 timers, 2 ADCs, 9 com. interfaces D.
3.0 · rating-3rating-3rating-3
BOE

HV320WHB-N10 - LCD

SPEC. NUMBER S863-8B013 PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE XINSHENG AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN.
3.0 · rating-3rating-3rating-3
SMC Diode

ABS10 - SINGLE PHASE 0.8AMP SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

Technical Data Data Sheet N1693, Rev. A ABS2 THRU ABS10 ABS2 THRU ABS10 SINGLE PHASE 0.8AMP SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER ABS Fe.
3.0 · rating-3rating-3rating-3
STMicroelectronics

D1047 - NPN Transistor

2SD1047 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized.
3.0 · rating-3rating-3rating-3
HAOHAI

BTA100-800B - Specially Varieties 4Q-Triacs

100A 【】 BTA100 Series Specially Varieties 4Q-Triacs  :NPNPN,,;  :;、;、。  :、、、、、、;。 Part Number BTA100-600B BTA100-800B BTA100-1000B BTA100-1200B B.
3.0 · rating-3rating-3rating-3
Realtek

RTL8111H - INTEGRATED 10/100/1000M ETHERNET CONTROLLER

RTL8111H-CG RTL8111HS-CG INTEGRATED 10/100/1000M ETHERNET CONTROLLER FOR PCI EXPRESS APPLICATIONS DATASHEET (CONFIDENTIAL: Development Partners Only) .
3.0 · rating-3rating-3rating-3
Cellwise

CW1073 - 6-7 Battery protection

www.cellwise-semi.com Features ÿOvercharge detection function • Threshold range 3.750V, 4.175V~4.450V, 25mV step, ± 25mV accuracyÿOverdischarge detect.
3.0 · rating-3rating-3rating-3
Nsiway

NS4110B - Dual Mode Audio Power Amplifier

SHENZHENNSIWAYTECHNOLOGY NS4110B Oct.2018 V1.0 NS4110B 18W AB/D 1  :6V-14V  : 7W(CLASS D,7.4V/4Ω,THD=10%) 10W(CLASS D,9V/4Ω,THD=10%) 18W(CLAS.
3.0 · rating-3rating-3rating-3
STMicroelectronics

STP110N7F6 - N-CHANNEL POWER MOSFET

STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RD.
3.0 · rating-3rating-3rating-3
EXAR

XR1075 - Audio Processor

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3.0 · rating-3rating-3rating-3
Toshiba Semiconductor

K10A60W - Silicon N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (DTMOS) TK10A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON).
3.0 · rating-3rating-3rating-3
Samsung

LSC320AN10 - LCD Module

Product Specification ( √ ) Preliminary Specification ( ) Approval Specification The information described in this specification is preliminary and c.
3.0 · rating-3rating-3rating-3
Philips

E810F - S.Q. Tube

page 1 2 3 4 5 6 7 8 9 E810F sheet 1 2 3 4 5 6 7 8 FP date 1968.12 1968.12 1968.12 1968.12 1968.12 1968.12 1968.12 1968.12 2000.12.10 .
3.0 · rating-3rating-3rating-3
Inchange Semiconductor

IRF3710 - N-Channel MOSFET Transistor

isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF3710 ·FEATURES ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·St.
3.0 · rating-3rating-3rating-3
Toshiba Semiconductor

A1013 - 2SA1013

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013 Color TV Verttical Deflection Output Applications Power Switching Applications 2S.
3.0 · rating-3rating-3rating-3
Alpha & Omega Semiconductors

AON7410 - 30V N-Channel MOSFET

AON7410 30V N-Channel MOSFET General Description The AON7410 uses advanced trench technology and design to provide excellent RDS(ON) with low gate ch.
3.0 · rating-3rating-3rating-3
Injoinic

IP5310 - Integrated USB TYPE-C Power-Bank System-On-Chip

IP5310 Integrated USB TYPE-C Power Bank System-On-Chip with 3A charger, 3.1A discharger 1. Features  Switch buck charger and boost  3A Synchronou.
3.0 · rating-3rating-3rating-3
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