10-channel Datasheet | Pinout, Features, Price Comparison & PDF

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PE30100K N-Channel Enhancement Mode Power MOSFET Description The PE30100K uses advanced trench technology to provide excellent RDS(ON) and low gate c

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HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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MOSFETs Silicon N-Channel MOS (DTMOS) TK10A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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Ordering number : ENN7066A Thick-Film Hybrid IC STK402-100 Two-Channel Class AB Audio Power Amplifier IC 60 W + 60 W Overview The STK402-000 series

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SEMICONDUCTOR 10N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (10A, 600Volts) DESCRIPTION The Nell 10N60 is a three-terminal s

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w w .D w t a S a e h t e U 4 .c m o www.DataSheet4U.com

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NCEP023N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized

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FTP23N10A N-Channel MOSFET Applications: • Automotive • DC Motor Control Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Cur

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF3710 ·FEATURES ·Drain Current –ID=57A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·St

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STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RD

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isc N-Channel MOSFET Transistor IRFB4110，IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Sp

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Ver 1.0 8 100M A /D MXT2088 MXT2088 8 100Msps 、 2 、

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TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications • Low drain-source ON-resistan

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WWW.ORIENT-CHIP.COM OCP8108A One-Channel High Power LED Controller ◼ General Description The OCP8108A is a high power LED driver, non-synchronous b

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N10 ·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltag

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Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  P

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TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A60D Switching Regulator Applications • Low drain-source ON-resistan

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