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NEC
NE5510179A - 3.5V OPERATION SILICON RF POWER MOSFET
PRELIMINARY DATA SHEET 3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ NE5510179A TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm .
CEL
NE6510179A - MEDIUM POWER GaAs HJ-FET
FunctionalONTINUED Characteristics NEC's 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET NE6510179A FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE Availab.
NEC
NE6510179 - 1 W L-BAND POWER GaAs HJ-FET
DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power .
NEC
NE6510179A - 1 W L-BAND POWER GaAs HJ-FET
DATA SHEET N-CHANNEL GaAs HJ-FET NE6510179A 1 W L-BAND POWER GaAs HJ-FET DESCRIPTION The NE6510179A is a 1 W GaAs HJ-FET designed for middle power .
