10N12 Datasheet | Specifications & PDF Download

isc N-Channel MOSFET Transistor IXTP110N12T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 14mΩ@VGS=10V ·Fully characterized avalanche vol

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1200V XPTTM Gen 4 IGBT High Speed IGBT for 20-50kHz Switching IXYX110N120C4 Symbol V CES V CGR VGES V GEM IC25 I LRMS I C110 ICM SSOA (RBSOA) PC T J

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1200V XPTTM Gen 4 IGBT IXYX110N120B4 Extreme Light Punch Through IGBT for 5-30 kHz Switching VCES = 1200V I = 110A C110 V  2.10V CE(sat) t

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1200V XPTTM IGBT GenX4TM Ultra Low-Vsat PT IGBT for up to 5kHz Switching IXYX110N120A4 VCES = 1200V IC110 = 110A V  1.80V CE(sat) tfi(typ) = 300

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1200V XPTTM Gen 4 IGBT IXYK110N120B4 Extreme Light Punch Through IGBT for 5-30 kHz Switching Symbol V CES V CGR VGES V GEM IC25 I LRMS I C110 ICM S

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Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Thr

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isc N-Channel MOSFET Transistor IPD110N12N3,IIPD110N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤11mΩ ·Enhancement mode: ·100% avalanch

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SGH10N120RUF SGH10N120RUF Short Circuit Rated IGBT IGBT General Description Fairchild's RUF series of Insulated Gate Bipolar Transistors (IGBTs) pr

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 14mΩ@VGS=10V ·Fully characterized avalanche voltage and curre

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1200V XPTTM IGBT GenX4TM Ultra Low-Vsat PT IGBT for up to 5kHz Switching IXYK110N120A4 VCES = 1200V IC110 = 110A V  1.80V CE(sat) tfi(typ) = 300

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TrenchT2TM Power MOSFET Advance Technical Information IXTA110N12T2 IXTP110N12T2 VDSS = 120V ID25 = 110A RDS(on)  14m N-Channel Enhancement Mode

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1200V XPTTM Gen 4 IGBT IXYN110N120C4 High Speed IGBT for 20-50kHz Switching Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA) PC TJ TJM

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TrenchT2TM Power MOSFET Advance Technical Information IXTA110N12T2 IXTP110N12T2 VDSS = 120V ID25 = 110A RDS(on)  14m N-Channel Enhancement Mode

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N N-CHANNEL IGBT R TT010N120EI MAIN CHARACTERISTICS IC 10 A VCES 1200V Vcesat-ty（p Vge=15V） 1.6V Package  APPLICATIONS  General purpos

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1200V XPTTM IGBT GenX4TM Ultra Low-Vsat PT IGBT for up to 5kHz Switching IXYN110N120A4 Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 ICM SSOA (RBSOA)

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 120V OptiMOS™ 3 Power-Transistor IPD_S110N12N3 G Data Sheet Rev. 2

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance

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HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N12

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BRG10N120D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P 。Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package.  / Features ，，，。 Buil

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