10N12 Datasheet | Specifications & PDF Download

Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Thr

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance

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1200V XPTTM Gen 4 IGBT IXYX110N120B4 Extreme Light Punch Through IGBT for 5-30 kHz Switching VCES = 1200V I = 110A C110 V  2.10V CE(sat) t

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HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N12

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SCT10N120 Datasheet Silicon carbide Power MOSFET 1200 V, 500 mΩ typ., 12 A in an HiP247 package Features HiP247 3 2 1 D(2, TAB) • Very low RDS(o

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HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N12

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HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet January 2000 File Number 4575.2 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N

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METAL OXIDE VARISTOR 10mm Disc Part Maximum Varistor Maximum Withstanding Rated Energy Typical UL CSA VDE Number Allowable Voltage Voltage (V 0

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 14mΩ@VGS=10V ·Fully characterized avalanche voltage and curre

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NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 35 A, 1200 V HGTG10N120BND The HGTG10N120BND is a Non−Punch Through (NPT) IGBT design. Th

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SCT10N120AG Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package Features HiP247 3 2 1 D(2

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HGTG10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Thro

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHPM6B10N120/D Hybrid Power Module Integrated Power Stage for 460 VAC Motor Drives The

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MHPM6B10N120/D Hybrid Power Module Integrated Power Stage for 460 VAC Motor Drives The

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Chip Bead For EMI Suppression 201208 CIB/CIM10 Series (1608/ EIA 0603) APPLICATION High frequency EMI prevention application to computers, printers

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 120V OptiMOS™ 3 Power-Transistor IPD_S110N12N3 G Data Sheet Rev. 2

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS™ Power-Transistor, 120V OptiMOS™ 3 Power-Transistor IPD_S110N12N3 G Data Sheet Rev. 2

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