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10N12

10N12 DataSheet

Fairchild Semiconductor

10N120BND - HGTG10N120BND

 · 23 Hits of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. ...
JILIN SINO

TT010N120EI - N-CHANNEL IGBT

 · 14 Hits Low gate charge Trench FS Technology RoHS product Mark definition TO-247 TO-220MF ：Y(，)+WW（） ：++++++。 ORDER MESSAGE Order codes - Haloge...
JILIN SINO

TT010N120EQ - N-CHANNEL IGBT

 · 12 Hits ...
Intersil Corporation

HGTG10N120BND - N-Channel IGBT

 · 8 Hits of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. ...
Motorola

MHPM6B10N120SL - Hybrid Power Module

 · 7 Hits 15 25 Package 464A–01 Style 1 464B–02 Style 1 SS SUFFIX CASE 464B–02 Style 1 Symbol VCES VGES 10A120 15A120 25A120 10A120 15A120 25A120 10A120 15A120...
IXYS

IXYK110N120C4 - IGBT

 · 7 Hits  Optimized for Low Switching Losses  Positive Thermal Coefficient of Vce(sat)  International Standard Package Advantages  High Power Density  Low...
Intersil Corporation

HGTG10N120BN - N-Channel IGBT

 · 6 Hits of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. ...
Fairchild Semiconductor

HGTG10N120BND - N-Channel IGBT

 · 6 Hits of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. ...
Infineon

IPD110N12N3G - MOSFET

 · 6 Hits • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 17...
Infineon

IPS110N12N3G - MOSFET

 · 6 Hits • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 17...
INCHANGE

10N12 - N-Channel MOSFET

 · 6 Hits ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·SOA is Power-Dissip...
INCHANGE

IXTA110N12T2 - N-Channel MOSFET

 · 6 Hits ·Static drain-source on-resistance: RDS(on) ≤ 14mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-L...
Intersil Corporation

HGTP10N120BN - N-Channel IGBT

 · 5 Hits of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. ...
Motorola

MHPM6B10N120SS - Hybrid Power Module

 · 5 Hits 15 25 Package 464A–01 Style 1 464B–02 Style 1 SS SUFFIX CASE 464B–02 Style 1 Symbol VCES VGES 10A120 15A120 25A120 10A120 15A120 25A120 10A120 15A120...
GE Solid State

RFP10N15 - (RFP10N12 / RFP10N15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

 · 5 Hits ...
Intersil Corporation

HGT1S10N120BNS - N-Channel IGBT

 · 4 Hits of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. ...
Fairchild Semiconductor

HGTP10N120BN - N-Channel IGBT

 · 4 Hits of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. ...
BLUE ROCKET ELECTRONICS

BRG10N120D - Insulated-Gate Bipolar Transistor

 · 4 Hits ，，，。 Built in fast recovery diode, High reliability and thermal stability parameters, Low switching loss, Low saturation voltage. / Applications 。...
Motorola

MHPM6B10N120 - Hybrid Power Module

 · 4 Hits 15 25 Package 464A–01 Style 1 464B–02 Style 1 SS SUFFIX CASE 464B–02 Style 1 Symbol VCES VGES 10A120 15A120 25A120 10A120 15A120 25A120 10A120 15A120...
General Electric Solid State

F10N12L - N-Channel Enhancement Mode Power Field Effect Transistor Chip

 · 4 Hits ...
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