10N12 Datasheet | Specifications & PDF Download

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HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N12

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isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance

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Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Thr

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isc N-Channel MOSFET Transistor IXTP110N12T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 14mΩ@VGS=10V ·Fully characterized avalanche vol

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isc N-Channel MOSFET Transistor IPD110N12N3,IIPD110N12N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤11mΩ ·Enhancement mode: ·100% avalanch

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NCEP10N12,NCEP10N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely o

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1200V XPTTM Gen 4 IGBT High Speed IGBT for 20-50kHz Switching IXYX110N120C4 Symbol V CES V CGR VGES V GEM IC25 I LRMS I C110 ICM SSOA (RBSOA) PC T J

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NCEP10N12,NCEP10N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely o

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HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N12

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1200V XPTTM IGBT GenX4TM Ultra Low-Vsat PT IGBT for up to 5kHz Switching IXYK110N120A4 VCES = 1200V IC110 = 110A V  1.80V CE(sat) tfi(typ) = 300

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HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N12

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HGTG10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Thro

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N N-CHANNEL IGBT R TT010N120EI MAIN CHARACTERISTICS IC 10 A VCES 1200V Vcesat-ty（p Vge=15V） 1.6V Package  APPLICATIONS  General purpos

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1200V XPTTM Gen 4 IGBT IXYX110N120B4 Extreme Light Punch Through IGBT for 5-30 kHz Switching VCES = 1200V I = 110A C110 V  2.10V CE(sat) t

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SGH10N120RUF SGH10N120RUF Short Circuit Rated IGBT IGBT General Description Fairchild's RUF series of Insulated Gate Bipolar Transistors (IGBTs) pr

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1200V XPTTM Gen 4 IGBT IXYK110N120B4 Extreme Light Punch Through IGBT for 5-30 kHz Switching Symbol V CES V CGR VGES V GEM IC25 I LRMS I C110 ICM S

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SDM10N120FA (IPM) 1200V/10A SDM10N120FA 、 3 ， ，。 6 IGBT 3 。 SDM10N120FA 、、， 。 ，。 SDM10N120FA 、， ，，。  6 1200V/10A IGBT   、   3.

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HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet January 2000 File Number 4575.2 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N

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