INCHANGE
10N12 - N-Channel MOSFET
isc N-Channel Mosfet Transistor
·FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance
Rating:
1
★
(7 votes)
JILIN SINO
TT010N120EQ - N-CHANNEL IGBT
Rating:
1
★
(6 votes)
Fairchild Semiconductor
HGTP10N120BN - N-Channel IGBT
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Data Sheet August 2002
35A, 1200V, NPT Series N-Channel IGBT
The HGTG10N120BN, HGTP10N120BN and HGT1S10N12
Rating:
1
★
(5 votes)
Intersil Corporation
HGTP10N120BN - N-Channel IGBT
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Data Sheet January 2000 File Number 4575.2
35A, 1200V, NPT Series N-Channel IGBT
The HGTG10N120BN, HGTP10N
Rating:
1
★
(5 votes)
Fairchild Semiconductor
HGTG10N120BN - 35A/ 1200V/ NPT Series N-Channel IGBT
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Data Sheet August 2002
35A, 1200V, NPT Series N-Channel IGBT
The HGTG10N120BN, HGTP10N120BN and HGT1S10N12
Rating:
1
★
(4 votes)
GE Solid State
RFM10N15 - (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
Rating:
1
★
(4 votes)
Harris Semiconductor
RFP10N15 - (RFP10N12 / RFP10N15) N-Channel Power MOSFET
www.DataSheet4U.com
www.DataSheet4U.com
DataSheet 4 U .com
www.DataSheet4U www.DataSheet4U.com 4U.com
www.DataSheet4U.com
www.DataSheet4U.com
Da
Rating:
1
★
(4 votes)
Infineon
IPS110N12N3G - MOSFET
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOS™ Power-Transistor, 120V
OptiMOS™ 3 Power-Transistor IPD_S110N12N3 G
Data Sheet
Rev. 2
Rating:
1
★
(4 votes)
STMicroelectronics
SCT10N120 - Silicon carbide Power MOSFET
SCT10N120
Datasheet
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247™ package
3 2 1
HiP247™
D(2, TAB)
Features
• V
Rating:
1
★
(4 votes)
Fairchild Semiconductor
HGT1S10N120BNS - 35A/ 1200V/ NPT Series N-Channel IGBT
HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS
Data Sheet August 2002
35A, 1200V, NPT Series N-Channel IGBT
The HGTG10N120BN, HGTP10N120BN and HGT1S10N12
Rating:
1
★
(3 votes)
RFE
JVR-10N121K - METAL OXIDE VARISTOR
METAL OXIDE VARISTOR 10mm Disc
Part
Maximum
Varistor
Maximum Withstanding Rated Energy Typical UL CSA VDE
Number
Allowable Voltage
Voltage (V 0
Rating:
1
★
(3 votes)
GE Solid State
RFM10P12 - (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
Rating:
1
★
(3 votes)
GE Solid State
RFM10P15 - (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
Rating:
1
★
(3 votes)
General Electric Solid State
F10N12L - N-Channel Enhancement Mode Power Field Effect Transistor Chip
www.DataSheet4U.com
www.DataSheet4U.com
DataSheet4U.com
DataShee
DataSheet4U.com
DataSheet 4 U .com
www.DataSheet4U.com
www.DataSheet4U.com
et
Rating:
1
★
(3 votes)
Fairchild Semiconductor
10N120BND - HGTG10N120BND
Data Sheet
HGTG10N120BND
December 2001
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG10N120BND is a Non-Punch Thr
Rating:
1
★
(3 votes)
Infineon
IPD110N12N3G - MOSFET
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOS™ Power-Transistor, 120V
OptiMOS™ 3 Power-Transistor IPD_S110N12N3 G
Data Sheet
Rev. 2
Rating:
1
★
(3 votes)
Infineon
IPD110N12N3 - MOSFET
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
OptiMOS™ Power-Transistor, 120V
OptiMOS™ 3 Power-Transistor IPD_S110N12N3 G
Data Sheet
Rev. 2
Rating:
1
★
(3 votes)
INCHANGE
IPS110N12N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v
Rating:
1
★
(3 votes)
INCHANGE
IPD110N12N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPD110N12N3,IIPD110N12N3
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤11mΩ ·Enhancement mode: ·100% avalanch
Rating:
1
★
(3 votes)
IXYS
IXTP110N12T2 - Power MOSFET
TrenchT2TM Power MOSFET
Advance Technical Information
IXTA110N12T2 IXTP110N12T2
VDSS = 120V
ID25 = 110A RDS(on) 14m
N-Channel Enhancement Mode
Rating:
1
★
(3 votes)
