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10N12 Datasheet, Features, Application

10N12 N-Channel MOSFET

isc N-Channel Mosfet Transistor ·FEATURES ·Drai.

Fairchild Semiconductor
rating-1 29

10N120BND - HGTG10N120BND

Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Thr.
Intersil Corporation
rating-1 14

HGTP10N120BN - N-Channel IGBT

HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet January 2000 File Number 4575.2 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N.
ON Semiconductor
rating-1 14

HGTG10N120BND - N-Channel IGBT

NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 35 A, 1200 V HGTG10N120BND The HGTG10N120BND is a Non−Punch Through (NPT) IGBT design. Th.
GE Solid State
rating-1 7

RFP10N12 - (RFP10N12 / RFP10N15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

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Harris Semiconductor
rating-1 7

RFP10N12L - (RFP10N12L / RFP10N15L) N-Channel Logic Level Power MOSFET

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INCHANGE
rating-1 7

10N12 - N-Channel MOSFET

isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance.
INCHANGE
rating-1 7

IXTA110N12T2 - N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 14mΩ@VGS=10V ·Fully characterized avalanche voltage and curre.
GE Solid State
rating-1 5

RFM10P12 - (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

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Harris Semiconductor
rating-1 5

RFP10N15L - (RFP10N12L / RFP10N15L) N-Channel Logic Level Power MOSFET

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General Electric Solid State
rating-1 5

F10N12L - N-Channel Enhancement Mode Power Field Effect Transistor Chip

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Infineon
rating-1 5

IPD110N12N3G - MOSFET

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Power-Transistor,120V OptiMOS™3Power-Transistor IPD_S110N12N3G DataSheet Rev.2.
JILIN SINO
rating-1 5

TT010N120EQ - N-CHANNEL IGBT

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Intersil Corporation
rating-1 4

HGT1S10N120BNS - N-Channel IGBT

HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet January 2000 File Number 4575.2 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N.
Intersil Corporation
rating-1 4

HGTG10N120BN - N-Channel IGBT

HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet January 2000 File Number 4575.2 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N.
Fairchild Semiconductor
rating-1 3

HGTG10N120BND - N-Channel IGBT

HGTG10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Thro.
RFE
rating-1 3

JVR-10N121K - METAL OXIDE VARISTOR

METAL OXIDE VARISTOR 10mm Disc Part Maximum Varistor Maximum Withstanding Rated Energy Typical UL CSA VDE Number Allowable Voltage Voltage (V 0.
GE Solid State
rating-1 3

RFM10N12 - (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

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GE Solid State
rating-1 3

RFM10P15 - (RFM10N12/15 / RFM10P12/15) N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

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General Electric Solid State
rating-1 3

PCF10N12L - N-Channel MOSFET

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Samsung
rating-1 3

CIM10N121 - Chip Bead

Chip Bead For EMI Suppression 201208 CIB/CIM10 Series (1608/ EIA 0603) APPLICATION High frequency EMI prevention application to computers, printers.
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