10P Datasheet | Specifications & PDF Download

LM32010P Features n n 12 cm [4.7 ] QVGA format Black & white display n n Medium Size Graphic Type LCD Module High brightness (80 cd/m2) Mechanically

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BC54PA-Q series 45 V, 1 A NPN medium power transistors Rev. 1 — 2 May 2022 Product data sheet 1. General description NPN medium power transistor in

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BC54xPAS-Q series 45 V, 1 A NPN medium power transistors 27 April 2023 Product data sheet 1. General description NPN medium power transistor series

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HY3810P/M/B/PS/PM Features • 100V/180A RDS(ON) = 5.0 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices

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GA5210PH （Ver 1.5）    GA5210PH ，； GA5210PH 。 ， GA5210P、 GA5210PL， PT8A2511， A0201D， CMS12530。 ，（ 4.5V 5V）；  GA5210PH （12V ，4.5V ）（12V

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30V, 100A P-CHANNEL POWER MOSFET GENERAL DESCRIPTION The SFM3010PT uses advanced trench technology and design to provide excellent RDS(on) with low ga

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Data Sheet No. PD60147 rev.V IR2110(S)PbF/IR2113(S)PbF HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation Fully

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PROXIMITY SWITCH Description The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m

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Freescale Semiconductor Data Sheet: Product Preview Document Number: K10P121M100SF2 Rev. 4, 3/2011 Supports the following: MK10N512VMC100 K10 Sub-F

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IC GA5210PL （Ver 1.3） — — — — GA5210PL CMOS ，； GA5210PL GA5210P ，Reheat Defrost ， ； DIP-8 。 — — — — 3.3V~5.1V； 、； ； ，， 。 。 — si

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MDT10P72 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static u A/D convert

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HY3810P/M/B/PS/PM Features • 100V/180A RDS(ON) = 5.0 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices

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MOSEL VITELIC V43658R04V 3.3 VOLT 8M x 64 UNBUFFERED SDRAM MODULE PRELIMINARY Features ■ 168 Pin Unbuffered 8,388,608 x 64 bit Oganization SDRAM DI

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PROXIMITY SWITCH Description The sensors provide excellent results even with difficult-to-detect objects, e.g. small or thin parts, wires or bright m

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SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low

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www.DataSheet4U.com www.DataSheet4U.com

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STD10PF06 P-CHANNEL 60V - 0.18 Ω - 10A IPAK/DPAK STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STD10PF06 60 V < 0.20 Ω 10 A s TYPICAL RDS(on)

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Freescale Semiconductor Data Sheet: Product Preview Document Number: K10P81M100SF2 Rev. 4, 3/2011 K10 Sub-Family Data Sheet Features • Operating Cha

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EC-10N16/20 & EC-10P16/20 HIGH POWER 125W HIGH QUALITY AUDIO AMPLIFIER APPLICATIONS N & P CHANNEL LATERAL MOSFETs T03 8.2 1.57 + 0.5 11.5 + 0.3 2

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