11-Channel Datasheet | Specifications & PDF Download

STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RD

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isc N-Channel MOSFET Transistor IRFB4110，IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Sp

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FCP11N60 / FCPF11N60 — N-Channel SuperFET® MOSFET FCP11N60/FCPF11N60 March 2014 General Description SuperFET® MOSFET is Fairchild Semiconductor’s f

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rceTek MICROELE ChipSou PSTAR ONICS TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://www.ChipSourceTek.com E-mail: Tony.Wang@ChipSo

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FTP11N08A N-Channel MOSFET Applications: • Automotive • DC Motor Control • Class D Amplifier Features: • RoHS Compliant • Low ON Resistance • Low Gat

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H5N3011P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P

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11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss

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Advanced Analog Technology, Inc. November 2012 AAT1176B Product information presented is for internal use within AAT Inc. only. Details are subject

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SILICON P CHANNEL MOS TYPE 2SJ115 AUDIO FREQUENCY POWER AMP-LI FIE R APPLICATION. FEATURES: . High Breakdown Voltage : VDS S=-160V . High Forwar

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2SK1161, 2SK1162 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive curr

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STD11N65M2, STP11N65M2, STU11N65M2 Datasheet N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2 Power MOSFET in DPAK, TO-220 and IPAK packages TAB 3 DPAK 1

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3115B SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3115B is N-Channel MOS FET device that features

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P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION The ME8117 is the P-Channel logic enhancement mode power field effect transistors are produced using hi

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PA110BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 105mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA =

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HUF76113SK8 Data Sheet January 2003 6.5A, 30V, 0.030 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured us

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3115 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3115 is N-C

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP110N8F6 ·FEATURES ·Very low on-resistance ·Very low gate charge ·High avalanche ruggedness

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DTU11N65SJ/DTP11N6SJ/DTP11N6FSJ www.din-tek.jp N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 650 RDS(on) m

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AP2301/AP2311 2.0A SINGLE CHANNEL CURRENT-LIMITED POWER SWITCH Description The AP2301 and AP2311 are single channel current-limited integrated high-si

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