11.70-12.70 Datasheet | Specifications & PDF Download

MT3117/B 1 &KDQQHO 9 $3RZHU026)(7 )HDWXUHV ‡ Typ RDS (on)=6.3m: / VGS =10V,ID =85A ‡ Fast Switching Speed ‡ Low Gate

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PA1223 5 Watt Amplifier 2110-2170 MHz. 28v. GaAs Ultra Linear Power Features (typical values) High IP3

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PTC thermistors for overcurrent protection and as inrush current limiters Leaded disks, 260 V up to 1000 V Series/Type: Date: B597**C0 / B594**C1

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MT3117/B 1 &KDQQHO 9 $3RZHU026)(7 )HDWXUHV ‡ Typ RDS (on)=6.3m: / VGS =10V,ID =85A ‡ Fast Switching Speed ‡ Low Gate

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PNP Silicon AF Transistors BCP 51 BCP 53 For AF driver and output stages q High collector current q Low collector-emitter saturation voltage q C

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Model 11270-3 Hybrid Couplers 3 dB, 90o Applications_____________ • Microstrip Circuits • Dividers/Combiners • Switch Networks • Balanced Detectors •

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Freescale Semiconductor Technical Data Document Number: MHW8267AN Rev. 3, 5/2006 www.DataSheet4U.com Gallium Arsenide CATV Amplifier Module Features

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Vacuum Fluorescent Display Module Specification Model: GU112X16G-7000 Specification No: Date Of Issue: Revision: DS-907-0001-04 March 15, 2002 April

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Vacuum Fluorescent Display Module Specification Model: GU112X16G-7003 Specification No: Date Of Issue: Revision: DS-914-0001-04 March 15, 2002 April

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IPB70N12S3-11 IPI70N12S3-11, IPP70N12S3-11 OptiMOS™-T Power-Transistor Product Summary Features • OptiMOSTM - power MOSFET for automotive applicati

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KEY FEATURES LOW RDS(ON) AND QG AVALANCHE RATED TO-258 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE APPLICATIONS

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AN11012 Using the TEA1703 to reduce standby power Rev. 1 — 30 March 2011 Application note Document information Info Keywords Abstract Content SMPS, T

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IPB70N12S3-11 IPI70N12S3-11, IPP70N12S3-11 OptiMOS™-T Power-Transistor Product Summary Features • OptiMOSTM - power MOSFET for automotive applicati

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KEY FEATURES LOW RDS(ON) AND QG AVALANCHE RATED TO-258 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE APPLICATIONS

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www.DataSheet4U.com EID1112A1-5 UPDATED 07/12/2007 11.70-12.70 GHz 5-Watt Internally Matched Power FET FEATURES • 11.70-12.70 GHz Bandwidth • Input

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19-3027; Rev 2; 8/08 1.8V, 10-Bit, 170Msps Analog-to-Digital Converter with LVDS Outputs for Wideband Applications General Description The MAX1122 is

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MAX11270 EVALUATION KIT AVAILABLE 24-Bit, 10mW, 130dB SNR, 64ksps Delta-Sigma ADC with Integrated PGA General Description The MAX11270 is a 24-bit d

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ELECTRONICS INC. Surface Mount Power Inductor EPI G3229 Series • Used in TFT-LCD Bias Supply, Digital Cameras, Cordless Phones, Medical Diagnostic E

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19-1132; Rev 0; 10/96 KIT ATION EVALU LE B A IL A AV 12-Bit, 10Msps, TTL-Output ADC _____________________________Features o Monolithic, 12-Bit, 10Ms

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IPB70N12S3-11 IPI70N12S3-11, IPP70N12S3-11 OptiMOS™-T Power-Transistor Product Summary Features • OptiMOSTM - power MOSFET for automotive applicati

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