110-Channel Datasheet | Specifications & PDF Download

STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RD

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isc N-Channel MOSFET Transistor IRFB4110，IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Sp

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NVB110N65S3F MOSFET – Power, Single N-Channel, D2PAK 650 V, 110 mW, 30 A Description SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP110N8F6 ·FEATURES ·Very low on-resistance ·Very low gate charge ·High avalanche ruggedness

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TLE8110ED Smart Multichannel Low Side Switch with Parallel Control and SPI Interface 1 Overview Features • Overvoltage, Overtemperature, ESD-Protec

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PA110BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 105mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA =

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CAP1105 / CAP1106 5 and 6 Channel Capacitive Touch Sensor PRODUCT FEATURES General Description The CAP1106 and CAP1105, which incorporate SMSC’s Righ

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Features  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10V  Fast Switching and High efficiency  100% Avalanche Tested  Pb-free lead pla

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Silicon Junction FETs (Small Signal) 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 0.65±0.15 +0.2 unit: mm 0.65±0.15

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http://www.xiaoyu163.com STR-KS1100 QQ 376315150 892498299 SERVICE MANUAL Ver. 1.2 2007.07 AEP Model UK Model TEL 13942296513 QQ 376315150 89249829

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STP110N8F6 N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS

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J108/J109/J110/MMBFJ108 J108/J109/J110/MMBFJ108 N-Channel Switch • This device is designed for digital switching applications where very low on resi

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SUM110N06-04L New Product Vishay Siliconix N-Channel 60-V (D-S) 200_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 FEATURES rDS(on) (W) ID (A) 110 a 0.0

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New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 0.0021 at VGS = 10 V 0.0024 at VG

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RU55110R N-Channel Advanced Power MOSFET MOSFET Features • 55V/110A, RDS (ON) =5mΩ(tpy.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resist

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HYG110P04LQ1 D/U/V P-Channel Enhancement Mode MOSFET Feature  -40V/-50A RDS(ON)= 9.1mΩ(typ.)@VGS = -10V RDS(ON)= 12mΩ(typ.)@VGS = -4.5V  100% aval

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4110，IIRFP4110 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.5mΩ ·Enhancement m

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isc N-Channel MOSFET Transistor IRLR3110Z, IIRLR3110Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤14mΩ ·Enhancement mode: ·100% avalanche

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Features  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10 V  100% Avalanche test  Pb-free lead plating; RoHS compliant VS4110AT-Y 100V/

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