110-Channel Datasheet | Specifications & PDF Download

STP110N7F6 N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RD

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PA110BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 105mΩ @VGS = 10V ID 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA =

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isc N-Channel MOSFET Transistor IRFB4110，IIRFB4110 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching Sp

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STP110N8F6 N-channel 80 V, 0.0056 Ω typ.,110 A, STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS

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SPECIFICATIONS No. STK442-110 1. Case Outline 14Pins (See attached outline drawing) 2. Function class AB 2 channels AF power amplifier 3. Application

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SM1110NSA Features · 100V/1.7A , RDS(ON)=200mW(max.) @ VGS=10V RDS(ON)=235mW(max.) @ VGS=4.5V · ESD Protected · Reliable and Rugged · Lead Free and Gr

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APM1105NU Features · 100V/16A, RDS(ON)= 100mW (max.) @ VGS=10V RDS(ON)= 170mW (max.) @ VGS=4.5V · ESD Protected · Reliable and Rugged · Lead Free and

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP110N8F6 ·FEATURES ·Very low on-resistance ·Very low gate charge ·High avalanche ruggedness

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Features  Enhancement mode  Very low on-resistance RDS(on) @ VGS=10 V  100% Avalanche test  Pb-free lead plating; RoHS compliant VS4110AT-Y 100V/

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Si7110DN Vishay Siliconix N-Channel 20-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.0053 at VGS = 10 V 0.0078 at VGS = 4

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SPECIFICATIONS No. STK442-110 1. Case Outline 14Pins (See attached outline drawing) 2. Function class AB 2 channels AF power amplifier 3. Application

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isc N-Channel MOSFET Transistor IRLR3110Z, IIRLR3110Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤14mΩ ·Enhancement mode: ·100% avalanche

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APM1110NU/APM1110NUB ® N-Channel Enhancement Mode MOSFET Features • 100V/10A, RDS(ON)= 175mΩ (max.) @ VGS=10V RDS(ON)= 235mΩ (max.) @ VGS=4.5V •

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isc N-Channel MOSFET Transistor IRFB4110G， IIRFB4110G ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.5mΩ ·Enhancement mode ·Fast Switching

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SM1105NSV Features · 100V/3.5A, RDS(ON)= 105mW(max.) @ VGS= 10V RDS(ON)= 175mW(max.) @ VGS= 4.5V · ESD proteced · Reliable and Rugged · Lead Free and

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP4110，IIRFP4110 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤4.5mΩ ·Enhancement m

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Supertex inc. TN0110 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► Low threshold - 2.0V max. ►► High input impedance ►► Low input capaci

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N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – MARCH 94 FEATURES * 100 Volt VDS * RDS(on)= 4Ω ZVN2110A D G S E-Line TO92 Compatible ABSOL

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http://www.xiaoyu163.com STR-KS1100 QQ 376315150 892498299 SERVICE MANUAL Ver. 1.2 2007.07 AEP Model UK Model TEL 13942296513 QQ 376315150 89249829

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