111N15N-VB TO220 111N15N-VB TO220 Datasheet N-Chan.
Infineon
IPP111N15N3 - Power-Transistor
IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.
Infineon Technologies
IPP111N15N3G - Power Transistor
IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOS 3 Power-Transistor TM Product Summary V DS R DS(on),max (TO263) ID 150 10.8 83 V mΩ A Features •.
Infineon
111N15N - Power-Transistor
IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.
Infineon Technologies
IPI111N15N3G - Power Transistor
IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOS 3 Power-Transistor TM Product Summary V DS R DS(on),max (TO263) ID 150 10.8 83 V mΩ A Features •.
Infineon
IPI111N15N3 - Power-Transistor
IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (.
INCHANGE
IPP111N15N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPP111N15N3，IIPP111N15N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11.1mΩ ·Enhancement mode ·Fast Switch.
INCHANGE
IPI111N15N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤11.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche.
VBsemi
111N15N - N-Channel MOSFET
111N15N-VB TO220 111N15N-VB TO220 Datasheet N-Channel 150 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0085 at VGS = 10 V .