11N60C3 Datasheet | Specifications & PDF Download

SPP11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic av

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate c

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SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate c

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW11N60C3 ISPW11N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhanceme

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Final data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 VDS @ Tjmax RDS(on) ID 650 0.38 11 V Ω A Cool MOS™ Power Transistor Feature • New revolutio

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Isc N-Channel MOSFET Transistor SPB11N60C3 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·

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isc N-Channel MOSFET Transistor SPA11N60C3E8185，SPA11N60C3E8185 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast

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SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate c

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Final data SPW11N60C3 VDS @ Tjmax RDS(on) ID 650 0.38 11 P-TO247 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ul

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isc N-Channel MOSFET Transistor SPP11N60C3，ISPP11N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switchin

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SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate c

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isc N-Channel MOSFET Transistor ·FEATURES ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved tr

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