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SPA11N60C3 N-Channel MOSFET

SPA11N60C3 Description

isc N-Channel MOSFET Transistor *.

SPA11N60C3 Features

* New revolutionary high voltage technology
* Ultra low gate charge
* High peak current capability
* Improved transconductance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor SPA11N60C3
* APPLI

SPA11N60C3 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage (f>1Hz) Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 11 7 33 PD Total Dissipation 33 Tj Operating Junction

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Datasheet Details

Part number
SPA11N60C3
Manufacturer
INCHANGE
File Size
197.50 KB
Datasheet
SPA11N60C3-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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