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SPA11N60C3E8185

N-Channel MOSFET

SPA11N60C3E8185 Features

* Static drain-source on-resistance: RDS(on) ≤0.38Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Ultra low gate charge

* High peak current capability

SPA11N60C3E8185 General Description


*Ultra low gate charge
*High peak current capability
*Improved transconductance
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 33 PD To.

SPA11N60C3E8185 Datasheet (241.72 KB)

Preview of SPA11N60C3E8185 PDF

Datasheet Details

Part number:

SPA11N60C3E8185

Manufacturer:

INCHANGE

File Size:

241.72 KB

Description:

N-channel mosfet.

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SPA11N60C3E8185 N-Channel MOSFET INCHANGE

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