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SPA11N60C3E8185 N-Channel MOSFET

SPA11N60C3E8185 Description

isc N-Channel MOSFET Transistor SPA11N60C3E8185，SPA11N60C3E8185 *.
Ultra low gate charge. High peak current capability. Improved transconductance. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER.

SPA11N60C3E8185 Features

* Static drain-source on-resistance: RDS(on) ≤0.38Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

SPA11N60C3E8185 Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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Datasheet Details

Part number
SPA11N60C3E8185
Manufacturer
INCHANGE
File Size
241.72 KB
Datasheet
SPA11N60C3E8185-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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