SPA11N60C3E8185 N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor SPA11N60C3E8185，SPA11N60C3E8185 *.
Ultra low gate charge. High peak current capability. Improved transconductance. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER.

📥 Download Datasheet

SPA11N60C3E8185 Datasheet Preview — Preview of SPA11N60C3E8185 PDF

Datasheet Specifications

Part number: SPA11N60C3E8185
Manufacturer: INCHANGE
File Size: 241.72 KB
Datasheet: SPA11N60C3E8185-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on) ≤0.38Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

SPA11N60C3E8185 Distributors

📁 Related Datasheet

SPA11N60C3 SPA11N60C2 SPA11N60CFD SPA11N80C3 SPA1118Z SPA1526Z

📌 All Tags

SPA11N60C3E8185 N-Channel MOSFET INCHANGE

INCHANGE SPA11N60C3E8185-like datasheet