SPA11N60C3E8185 - N-Channel MOSFET
*Ultra low gate charge *High peak current capability *Improved transconductance *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 33 PD To
