12-18 Datasheet | Specifications & PDF Download

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ILLUMINANT PRODUCT SPECIFICATION FOR TFT LCM CUSTOMER: MODEL NO: ACCEPTED BY: I1813-6IPN1216A APPROVED BY: 2009.11.30 long CHECKED BY: 2009.11.30

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HAA2018A AB /D ，12W HAA2018AFM、AB/D、、  AB、D 12W。EMI  D： FM。 －12W (VDD=7.0V, RL =2Ω，THD+N=10%) －6.5W (VDD=7.0V, RL =4Ω，THD+N=10%) HAA20

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Date:- 21st June, 2016 Data Sheet Issue:- K2 Phase Control Thyristor Types N0180SH120 to N0180SH160 Absolute Maximum Ratings VDRM VDSM VRRM VRSM V

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NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILATOR OF FM/VHF TUNER High Current Gain Bandwidth Product fT=1100MHz 2SC1812 SOT-23 1

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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PIC12(L)F1822/16(L)F1823 8/14-Pin Flash Microcontrollers with XLP Technology High-Performance RISC CPU • Only 49 Instructions to Learn: - All single-

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HITANO ENTERPRISE CORP. Data Sheet Customer: Product: Multilayer Chip Varistor. A series High Surge Absorption Size : 1206/1210/1812/2220 Issued

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Automotive NJG1812AMET-A HIGH POWER DPDT SWITCH GaAs MMIC ■ FEATURES ● AEC-Q100 grade 2 qualified ● Low voltage operation VDD = 2.7 V typ. ● Logic c

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S-1312xxxH Series www.ablicinc.com © ABLIC Inc., 2015 105C OPERATION LOW CURRENT CONSUMPTION HIGH RIPPLE-REJECTION LOW DROPOUT CMOS VOLTAGE REGULAT

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LC1218 250mA Low Consumption Linear Regulator DESCRIPTION LC1218 series is a group of positive voltage output, low power consumption, low dropout vo

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MCMA120UJ1800ED Thyristor Module 3~ Rectifier Bridge, half-controlled (high-side) + free wheeling Diode 3~ Rectifier VRRM = I DAV = I FSM = 1800 V

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36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) CY7C

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Note • Please read rating and CAUTION (for storage, operating, rating, soldering, mounting and handling) in this catalog to prevent smoking and/or b

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High Power Lithium Ion APR18650M1A A123Systems’ lithium ion rechargeable APR18650M1A cell is capable of very high power, long cycle and storage life,

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MULTILAYER CERAMIC CAPACITORS CC Series X7R 16V TO 100V DATA SHEET Product specification – Aug. 13, 2003 V.06 Supersedes Date of Jun. 19, 2003 2 S

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NCP3418, NCP3418A Dual Bootstrapped 12 V MOSFET Driver with Output Disable The NCP3418 and NCP3418A are dual MOSFET gate drivers optimized to drive t

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36-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 36-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) CY7C

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CY7C1241V18 CY7C1256V18 CY7C1243V18 CY7C1245V18 36-Mbit QDR™-II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) Features • Separate independ

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