120-Channel Datasheet | Specifications & PDF Download

Ordering number : ENN7067 Thick-Film Hybrid IC STK402-120 Two-Channel Class AB Audio Power Amplifier IC 80 W + 80 W Overview The STK402-000 series p

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SPECIFICATION No. STK403-120 1. Case Outline 15Pins (See attached Package Outline Diagram) 2. Function 3. Application 2 channels AF power amplifier 8

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ALC1200 (PN: ALC1200-VD1-CG) 7.1+2 CHANNEL HD AUDIO CODEC WITH CONTENT PROTECTION DATASHEET Preliminary version Rev. 0.11 26th July 2018 Realtek S

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Ordering number : ENN7346 Thick-Film Hybrid IC STK404-120 One-Channel Class AB Audio Power Amplifier IC 80 W Overview The STK404-000 series products

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IGD1205W Hybrid Integrated Isolated N-Channel IGBT Driver Electrical Specifications Key Features: • Internal DC/DC Converter • Internal OptoCoupler •

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UNISONIC TECHNOLOGIES CO., LTD UTT120P06 Preliminary -120A, -60V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT120P06 is a P-channel power MOSFE

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P1203BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 12mΩ @VGS = 10V ID 11A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C

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WNSC2M12120TB N-Channel Silicon Carbide MOSFET Rev.01 - 18 November 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TSPAK

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WNSC2M40120TB N-Channel Silicon Carbide MOSFET Rev.01 - 19 November 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TSPAK

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120N06N-VB TO220 120N06N-VB TO220 Datasheet N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 60 0.011 at VGS = 10 V 0.013 at VGS

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VBL1204N N-Channel 200-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 200 0.038 at VGS = 15 V 0.043 at VGS = 10 V ID

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P1203ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 12mΩ @VGS = -10V ID -52A TO-252 ABSOLUTE MAXIMUM RATINGS (TA =

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UNISONIC TECHNOLOGIES CO., LTD 4N120 4.0A, 1200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N120 provide excellent RDS(ON), low gate charge and ope

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VBFB1206N N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.051 at VGS = 10 V TO-251 ID (A) 30 D FEATURES

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MOSFETs Silicon Carbide N-Channel MOS TW015Z120C TW015Z120C 1. Applications • Switching Voltage Regulators 2. Features (1) Chip design of 3rd genera

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WNSC2M30120TB N-Channel Silicon Carbide MOSFET Rev.01 - 18 November 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TSPAK

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WNSC2M75120B7-A N-Channel Silicon Carbide MOSFET Rev.02 - 11 October 2024 Product data sheet 1. General description Silicon Carbide MOSFET in a TO26

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GSM2120P 20V N+P Dual Channel MOSFETs Product Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMO

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