120-ns Datasheet | Specifications & PDF Download

SRC1203 NPN Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • With built-in bias

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SCOTTSDALE DIVISION 1N6267 thru 1N6303A 1.5KE6.8 thru 1.5KE400A Unidirectional & Bidirectional Transient Voltage Suppressors WWW.Microsemi .COM DES

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ST 2SC2120 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups, O and Y

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3KP Series 3KP Transient Voltage Suppressor Diode Series General Information The 3KP series is designed to protect voltage sensitive components from

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Xiner 1200V，15A，Trench-FS IGBT XNS15N120T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, ty

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Datasheet 7 Circuits Darlinton Transistor Array BA12003B BA12003BF BA12004B BA12004BF General Description BA12003B/BF,BA12004B/BFare darlinton trans

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Ordering number : EN2086C 2SB1204 Bipolar Transistor –50V, –8A, Low VCE(sat), PNP Single TP/TP-FA http://onsemi.com Applications • Relay drivers,

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1.0SMBxx(C)A Series Surface Mount Transient Voltage Suppressor Rectifiers Reverse Voltage 5.8 ~ 450 V 1000 Watt Peak Pulse Power Features ● Glass pas

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、 KP212X ⚫ 650V MOSFET ⚫ ◼ (SEL ) ◼ (SEL= GND) ⚫ ±4%、 ⚫ <70mW ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ ： ◼ (SLP) ◼ (OTP) ◼ (OCP) ◼ (LEB) ◼ ◼ VDD ⚫ SOP-7/8、DIP-7

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3KP Series 3KP Transient Voltage Suppressor Diode Series General Information The 3KP series is designed to protect voltage sensitive components from

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Heart Rate, Blood Oxygen Concentration, Pulse Oximetry, Proximity, Light and Color Sensor OB1203 Datasheet Description The Renesas OB1203SD and OB12

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RN1201~RN1206 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1201,RN1202,RN1203,RN1204,RN1205,RN1206 Switching, Inverter Circuit, Inte

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SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD 4.0SMDJ Series 4000W Surface Mount Transient Voltage Suppressors Features l Peak power dissipation 4000W @10

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WNSC2M40120B7 N-Channel Silicon Carbide MOSFET Rev.01 - 23 November 2023 Product data sheet 1. General description Silicon Carbide MOSFET in a TO263

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www.DataSheet4U.com 2STA2120 High power PNP epitaxial planar bipolar transistor Preliminary data Features ■ ■ ■ ■ ■ High breakdown voltage VCEO = 2

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M-TEK http://www.mag-tek.com.tw 10/100 BASE-T TRANSFORMER MODULES ) Compliant With IEEE 802.3 standards including Baseline Wander Compensation speci

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AONS62922 120V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Logic level Gate Drive • Optimized for

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CONSONANCE 4.5V to 32V Input Current Mode Boost DC-DC Controller CN5120 General Description: The CN5120 is a current mode fixed-frequency PWM contr

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B_S-1W & B_D-1W Series 1W, FIXED INPUT ISOLATED & UNREGULATED SINGLE OUTPUT MINIATURE SIP/DIP PACKAGE RoHS PART NUMBER SYSTEM B0505S-1W Rated Power Pa

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