1200 Datasheet | Specifications & PDF Download

ST7265 1200CH System-On-Chip Driver for 800RGBx480 TFT LCD Datasheet Sitronix reserves the right to change the contents in this document without prior

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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ALC1200 (PN: ALC1200-VD1-CG) 7.1+2 CHANNEL HD AUDIO CODEC WITH CONTENT PROTECTION DATASHEET Preliminary version Rev. 0.11 26th July 2018 Realtek S

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SiC Power MOSFET MCB30P1200LB ID25 = 38 A VDSS = 1200 V R = DS(on) max 52 mΩ Part number MCB30P1200LB 7 T1 4 9 8 7 Itsoohlaeteadtsisnukrface

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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100A 【】 BTA100 Series Specially Varieties 4Q-Triacs 　：NPNPN，，； 　：；、；、。 　：、、、、、、；。 Part Number BTA100-600B BTA100-800B BTA100-1000B BTA100-1200B B

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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E2 IGBT Modules Technical specifications • Can be configured as – Power integrated module (PIM) – 6-pack – 7-pack – Shunts and NTC on request – Custom d

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TEL: (858) 621-2700 URL: www.zcomm.com EMAIL: applications@zcomm.com Voltage-Controlled Oscillator Surface Mount Module Applications Test Equipment Sa

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S-1200 Series www.ablicinc.com © ABLIC Inc., 2003-2015 HIGH RIPPLE-REJECTION LOW DROPOUT LOW INPUT-AND-OUTPUT CAPACITANCE CMOS VOLTAGE REGULATOR Rev

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Rev.3.2_00 HIGH RIPPLE-REJECTION LOW DROPOUT LOW INPUT-AND-OUTPUT CAPACITANCE CMOS VOLTAGE REGULATOR S-1200 Series The S-1200 Series is a positive

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LCG75PIS120E2B 1200V, 75A PIM Module Features  VCE(sat) with positive temperature coefficient  Low VCE(sat)  Low switching losses  High current ca

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KWNFP75R12NS3 1200V 75A PIM IGBT NTC ， (VCE=2.0V) (Eoff=5.1mJ) (>10us) IGBT()（，T C=25℃） - V CES 1200 - V GES ±20 IC T C=25℃ T C

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 Description: High current density due to double mesa trchnology; BTA100 Series triacs is suitable for general purpose AC switching.  Applications:

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DFLR1200 - DFLR1600 SURFACE MOUNT SILICON RECTIFIER DIODES VOLTAGE RANGE: 200 - 600V CURRENT: 1.0 A Features Glass passivated device Ideal for su

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WNSC2D021200MB Silicon Carbide Diode Rev.01 - 16 August 2024 Product data sheet 1. General description Silicon Carbide Schottky diode in a SMB plast

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