128Mb-S Datasheet | Specifications & PDF Download

SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003 * Samsung Electronics reserves the right to chan

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SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification t4U.com54 TSOP-II with Pb-Free e(RoHS compliant) w.DataSheRevision 1.2 ww

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SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification t4U.com54 TSOP-II with Pb-Free e(RoHS compliant) w.DataSheRevision 1.2 ww

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SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification m o .c U 4 54 TSOP-II with Pb-Free t e (RoHS compliant) e h S a t a .D w

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Sept. 2024 SCB18X128XX0AF 128Mbit DDR OPI Xccela PSRAM EU RoHS Compliant Products Data Sheet Rev. H Data Sheet SCB18X128XX0AF 128Mbit DDR OPI Xccela

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K4S280832A CMOS SDRAM 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to

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K5L2731CAM-D770 Preliminary MCP MEMORY MCP Specification 128Mb NOR Flash + 32Mb UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSU

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eorex Revision History Revision 0.1 (Dec. 2013) - First release EM484M3244VBE Dec. 2013 www.eorex.com 1/18 eorex EM484M3244VBE 128Mb (1M4Bank3

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128MB, 256MB, 512MB (x72, ECC, SR), PC3200 184-Pin DDR SDRAM UDIMM DDR SDRAM UNBUFFERED DIMM MT9VDDT1672A – 128MB MT9VDDT3272A – 256MB MT9VDDT6472A

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HANBit HDD16M64D8W DDR SDRAM Module 128Mbyte (16Mx64bit), based on16Mx8,4Banks, 4K Ref., DIMM, Part No. HDD16M64D8W GENERAL DESCRIPTION The HANBiT H

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IS42S32400E IS45S32400E 4M x 32 128Mb SYNCHRONOUS DRAM NOVEMBER 2010 FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all si

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IS66WVS16M8FALL/BLL IS67WVS16M8FALL/BLL 128Mb SerialRAM 1.8V/3.0V, 104MHZ, SPI & QPI PROTOCOL ADVANCED DATA SHEET 128Mb SerialRAM 1.8V/3.0V, 104MHz,

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eorex EM488M1644VBB 128Mb (2M×4Bank×16) Synchronous DRAM Features • Fully Synchronous to Positive Clock Edge • Single 2.75V ~ 3.6V Power Supply • L

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eorex EM488M1644VTG 128Mb (2M4Bank16) Synchronous DRAM Features • Fully Synchronous to Positive Clock Edge • Single 3.3V 0.3V Power Supply • LVT

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168 pin unbuffered DIMM Modules • • • • • • • 168 Pin unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications PC100 & PC133 ver

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HYS 64/72V16300/32220GU SDRAM-Modules 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin U

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128Mb DDR SDRAM DDR SDRAM Specification Version 1.0 - 1 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM Revision History Version 0 (May, 1998) - Firs

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128Mb DDR SDRAM DDR SDRAM Specification Version 1.0 - 1 - REV. 1.0 November. 2. 2000 128Mb DDR SDRAM Revision History Version 0 (May, 1998) - Firs

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eorex EM488M1644VTF 128Mb (2M×4Bank×16) Synchronous DRAM Features • Fully Synchronous to Positive Clock Edge • Single 3.3V ±0.3V Power Supply • LVT

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IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES • F

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