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isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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Infrared Emitter Product No: M T E 1 3 0 0 N N 1 - W R C Peak Emission Wavelength: 1300nm The 1300nm IR emitter series is designed for applications r

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ST13003, ST13003-K High voltage fast-switching NPN power transistor 3 2 1 SOT-32 Figure 1. Internal schematic diagram C(2) B(3) Datasheet - producti

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TPF130 36M HD Composite Video Filter Driver With Shutdown Function Features  1-HDTV Video Filter Support Composite 1080i/720p  Optimized 6th-order

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FJP13007 — High Voltage Fast-Switching NPN Power Transistor November 2014 FJP13007 High Voltage Fast-Switching NPN Power Transistor Features • High

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13009K MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) PC(TO-3PB) 12A 400V 100W 120W

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NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD13007M MAIN CHARACTERISTICS Package IC VCEO PC(TO-220C) 8A 400V 80W z z z z z

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SHENZHEN JTD ELECTRONICS CO.,LTD 13001S8D FEATURES TO-92 Plastic-Encapsulate Transistors TRANSISTOR(NPN) Power switching applications TO-92 LIMMI

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TST002 SEMI CONDUCTOR MJE13002 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ W

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Product Folder Order Now Technical Documents Tools & Software Support & Community TPA3116D2, TPA3118D2, TPA3130D2 SLOS708G – APRIL 2012 – REVISED

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13001 NPN Epitaxial Silicon Transistor Features Collector-Emitter Voltage: VCEO= 400V Collector Dissipation: PC(max)= 1000mW TO-126 Absolute Maximu

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STD13007 NPN Silicon Power Transistor SWITCHING REGULATOR APPLICATIONS Features • High speed switching • High Collector Voltage : VCBO = 700V • Suit

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13003 NPN Epitaxial Silicon Transistor TO-220 HIGH VOLTAGE SWITCHING APPLICATIONS Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)

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ST13009 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot s

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Shenzhen Jingdao Electronic Co.,Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn 13009 PNP * ： 、 、、 。 * ： 、、。 B C E ：( Tc=25 ℃

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SPECIFICATION No. STK403-130 1. Case Outline 15Pins (See attached Package Outline Diagram) 2. Function 3. Application 2 channels AF power amplifier 1

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ST13005 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operat

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30mA Low Power LDO Features · Low power consumption · Low voltage drop · Low temperature coefficient · High input voltage (up to +18V) · Output volt

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