1333 Datasheet | Specifications & PDF Download

MAX13335E/MAX13336E EVALUATION KIT AVAILABLE Dual Automotive Differential Audio Receivers with I2C Control and Diagnostics General Description The M

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2 – 16 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13336 Features • Low Noise Figure: 1.4␣ dB Typical at 12␣ GHz • High Associated Gain: 9

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ13333/D Designer's SWITCHMODE Series NPN Silicon Power Transistor The MJ13333 trans

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Memory Module Specifications KVR1333D3S8N9/2G 2GB 1Rx8 256M x 64-Bit PC3-10600 CL9 240-Pin DIMM Important Information: The module defined in this data

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LF11331/LF13331/LF11332/LF13332/LF11333/LF13333/LF11201/LF13201/LF11202/LF13202 Quad SPST JFET Analog Switches January 1995 LF11331/LF13331/LF11332/

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CBB CB B 13{{PPN} PPN } （） CBB13 Po yp rop y l en e iFFilm ap a c it or PPolypropylene ol m l CCapacitor CBB CBB13 CB B 13 are non-inductively wound

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isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) · Reversed Biased SOA with Inductive Loa

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A1333 2 - Precision, High Speed, Hall-Effect Angle Sensor IC with Integrated Diagnostics for Safety-Critical Applications FEATURES AND BENEFITS •

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ13333/D Designer's SWITCHMODE Series NPN Silicon Power Transistor The MJ13333 trans

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www.DataSheet4U.com 19-3712; Rev 0; 5/05 3Msps/2Msps, 5V/3V, 2-Channel, TrueDifferential 12-Bit ADCs General Description The MAX1332/MAX1333 2-chann

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19-4341; Rev 0; 10/08 www.DataSheet4U.com Automotive DirectDrive Headphone Amplifiers with Output Protection and Diagnostics General Description The

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DC-DC Converter Power IC N/C 7,10,15,17,22,24,29,31 R/C (L.Active) 5 ON Vref 28 ON /OFF Control 6 Vcc Vboot 8 UVLO Start=7.2V Stop=6.7V BOOT Vre

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MITSUMI Lithium-Ion Battery Charge Control (1 cell) MM1333 Lithium-Ion Battery Charge Control (1 cell) Monolithic IC MM1333 Outline This IC was dev

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) ·High Switching Speed ·Minimum Lot-to-Lot

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robu

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·High Switching Speed ·Minimum Lot-to-Lot

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Memory Module Specifications KVR1333D3N9/8G 8GB 2Rx8 1G x 64-Bit PC3-10600 CL9 240-Pin DIMM Important Information: The module defined in this data she

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MAX13335E/MAX13336E EVALUATION KIT AVAILABLE Dual Automotive Differential Audio Receivers with I2C Control and Diagnostics General Description The M

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) ·High Switching Speed ·Minimum Lot-to-Lot

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