135 Datasheet | Specifications & PDF Download

Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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MS4N1350 MS4N1350E MS4N1350B MS4N1350W MS4N1350FW N-channel 1500 V, 6 Ω, 4 A, Power MOSFET in TO-263,TO-247TO-220, TO-3PB, TO-3PF Features Type VDS

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www.DataSheet4U.com NAS1351 (Fine) and NAS1352(Coarse) Socket Head Cap Screws Genuine Aircraft Hardware Co. Then to designate material add a( - )

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G1135P High Precision CC/CV Primary-Side PWM Power Switch 1. General Description G1135P is a high performance offline PWM Power switch for low power

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Xiner 1350V，25A，Trench-FS IGBT SP25N135T Features  Advanced Trench+FS (Field Stop) IGBT technology  Low Collector-Emitter Saturation voltage, typ

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IHW20N135R3 Resonant Switching Series Reverse conducting IGBT with monolithic body diode Features: • Offers new higher breakdown voltage to 1350V

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1351 DESCRIPTION ¡¤ With TO-220C package ¡¤ Complement to type 2SB988 ¡¤ Low

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Silicore 2.4W AUDIO AMPLIFIER, SIF AMPLIFIER AND DETECTOR FOR TV SILICON MONOLITHIC BIPOLAR INTEGRATED DIRCUIT DESCRIPTION The CD1353CP is a silicon m

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A1354 High Precision 2-Wire Linear Hall Effect Sensor IC with Pulse Width Modulated Output Features and Benefits ▪ Designed for automotive, battery-p

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Data Travo Flyback BSC25-05N2135C Tampak Bawah Skema Koneksi No. Pin Fungsi 1 2 34 H B+115 16 AFC 5 6 7 8 9 10 GND HT ABL NP 180 NP Digun

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1358 DESCRIPTION ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Vo

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LXDC Series μDCDC Converters Features zz Low EMI noise and small footprint due to Murata’s Shown larger than actual size. inductor-embedded ferrite

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Resonant Switching Series Reverse conducting IGBT with monolithic body diode IHW30N135R3 Data sheet Industrial Power Control IHW30N135R3 Resonant Sw

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R

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BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor August 2013 Features • Complement to BD136,

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Features: • 1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operati

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www.DataSheet4U.com HANWEI ELCETRONICS CO.,LTD MQ-135 http://www.hwsensor.com TECHNICAL DATA MQ-135 GAS SENSOR FEATURES Wide detecting scope Fast

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