15N03 Datasheet | Specifications & PDF Download

AP15N03H/J Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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IPP15N03L IPB15N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 12.6 42 P- T

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 15mΩ ID 16A G UIS, Rg 100% Tested

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N-Channel 30-V (D-S) MOSFET DTL15N03 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0135 at VGS = 10 V 30 0.0165 at VGS = 4.5 V ID (A)a, g

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AP15N03GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S N-CHANNEL ENH

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MOSFET - Power, Single N-Channel, LFPAK8 30 V, 1.15 mW, 257 A NTMJS1D15N03CG Features • Wide SOA to Improve Inrush Current Management • Advanced LFP

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Single N-Channel Enhancement Mode MOSFET HYG015N03LS1C2 Feature HYG015N03LS1C2 Pin Description  30V/130A DDDD DDDD RDS(ON)= 1.4mΩ (typ.) @ VGS

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15N03-VB 15N03-VB Datasheet www.VBsemi.com N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.007 at VGS = 10 V 0.009 at VGS =

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EMB15N03A N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 14mΩ ID 25A G UIS, Rg 10

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CRSM015N03L2 SkyMOS2 N-MOSFET 30V, 1.4mΩ, 80A Features • Uses CRM(CQ) advanced SkyMOS2 technology • Extremely low on-resistance RDS(on) • Excellent Q

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HYG015N03LR1P/B Feature  30V/170A RDS(ON)=1.8mΩ(typ.)@VGS=10V RDS(ON)=2.4mΩ(typ.)@VGS=4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-Free

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www.DataSheet4U.com AP15N03GH/J Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switchi

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ADV ADM15N03S N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 30V ID 15A RDS(ON) (mΩ) 4.0mΩ SOP-8 S D S D S D G

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RTF015N03 Nch 30V 1.5A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 30V 240mW 1.5A 0.8W lFeatures 1) Low on - resistance. 2) Built-in G-S Pro

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www.DataSheet4U.com AP15N03H/J Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G S N-CHANNEL ENHANCE

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www.DataSheet4U.com www.DataSheet4U.com AP15N03H/J Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G

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EMB15N03VA N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 15mΩ ID 8A G UIS, Rg 10

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www.DataSheet4U.com AP15N03P Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching G D S N-CHANNEL ENHANCE

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AP15N03GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching ▼ RoHS Compliant G

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HYG015N03LS2C2 Single N-Channel Enhancement Mode MOSFET Feature Description  30V/140A RDS(ON)= 1.5mΩ (typ.) @VGS = 10V RDS(ON)= 2.4mΩ (typ.) @VGS =

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