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MX25L1606E - CMOS SERIAL FLASH MEMORY
MX25L8006E MX25L1606E MX25L8006E, MX25L1606E DATASHEET P/N: PM1548 1 REV. 1.2, JUL. 02, 2010 Free Datasheet http://www.datasheet-pdf.com/ MX25L80.HY1606AP - N-Channel Enhancement Mode MOSFET
HY1606AP N-Channel Enhancement Mode MOSFET Features • • • • 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free .HY1606P - N-Channel Enhancement Mode MOSFET
HY1606P/B N-Channel Enhancement Mode MOSFET Features • 60V/66A RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.25L1606E - CMOS SERIAL FLASH MEMORY
MX25L8006E MX25L1606E MX25L8006E, MX25L1606E DATASHEET P/N: PM1548 REV. 1.2, JUL. 02, 2010 1 MX25L8006E MX25L1606E Contents FEATURES....UF1606 - (UF1600 - UF1608) ULTRAFAST SWITCHING RECTIFIER
www.DataSheet4U.com ww w.D a taS hee t4U .co m www.DataSheet4U.com ww w.D a taS hee t4U .co m .A1606 - 2SA1606
Ordering number:EN2535 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications.ADG1606 - Multiplexers
Data Sheet 4.5 Ω RON, 16-Channel, Differential 8-Channel, ±5 V,+12 V,+5 V, and +3.3 V Multiplexers ADG1606/ADG1607 FEATURES 4.5 Ω typical on resista.HY1606B - N-Channel MOSFET
HY1606P/B N-Channel Enhancement Mode MOSFET Features • 60V/66A RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le.NCP1606 - Cost Effective Power Factor Controller
DATA SHEET www.onsemi.com Cost Effective Power Factor Controller NCP1606 The NCP1606 is an active power factor controller specifically designed for u.HL1606 - LED driver
www.DataSheet4U.com HL1606 DESCRIPTION HL1606 is a LED driver IC with SPI controlled. We can get “complex mode changes” by fewer data. FEATURES NMOS.HER1606 - 16.0AMPS. GLASS PASSIVATED HIGH EFFICIENT RECTIFIERS
ShenZhen YueFeiDa Electronics Technology Co.,Ltd HER1601 THRU HER1608 16.0AMPS. GLASS PASSIVATED HIGH EFFICIENT RECTIFIERS FEATURE TO-220A Low fo.C3D16065D - Silicon Carbide Schottky Diode
C3D16065D Silicon Carbide Schottky Diode Z-Rec® Rectifier Features Package VRRM = IF (TC=135˚C) = Qc = 650 V 22 A** 40 nC** • 650-Volt.AMG16064A - LCD
145 Royal Crest Court Unit 42 Markham, ON, Canada L3R 9Z4 Tel: 905-477-1166 Fax: 905-477-1782 http://www.orientdisplay.com SPECIFICATIONS FOR LCD MODU.HER1606PT - Glass Passivated High Efficient Rectifiers
Features * Superfast recovery time, high voltage * Low forward voltage, high current capability * Low thermal resistance * Low power loss, high effici.HER1606C - HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER
HER1601C - HER1607C 9ROWDJH5DQJHWR89 )RUZDUG&XUUHQW6 $PSHUH HIGH EFFICIENCY GLASS PASSIVATED RECTIFIER FEATURES ͈High speed switch.HPC46004 - (HPC16064 - HPC46064 / HPC16004 - HPC46004) High-Performance microController
HPC16064 26064 36064 46064 16004 26004 36004 46004High-Performance microController May 1992 HPC16064 26064 36064 46064 16004 26004 36004 46004 High-.K1606 - 2SK1606
Power F-MOS FETs 2SK1606 www.DataSheet4U.com Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q .1606 - Air Core Inductors
Web page Sample & buy Tools & software Support & FAQ Document 163-1 Micro Spring™ Air Core Inductors • Small air core inductors feature high Q .C3D16065D1 - 16A Silicon Carbide Schottky Diode
C3D16065D1 3rd Generation 650 V, 16 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky B.