1606 Datasheet | Pinout, Features, Price Comparison & PDF

MX25L8006E MX25L1606E MX25L8006E, MX25L1606E DATASHEET P/N: PM1548 1 REV. 1.2, JUL. 02, 2010 Free Datasheet http://www.datasheet-pdf.com/ MX25L80

HY1606AP N-Channel Enhancement Mode MOSFET Features • • • • 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free

MX25L8006E MX25L1606E MX25L8006E, MX25L1606E DATASHEET P/N: PM1548 REV. 1.2, JUL. 02, 2010 1 MX25L8006E MX25L1606E Contents FEATURES

www.DataSheet4U.com HL1606 DESCRIPTION HL1606 is a LED driver IC with SPI controlled. We can get “complex mode changes” by fewer data. FEATURES NMOS

Ordering number:EN2535 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications

Ordering number:EN2535 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications

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SFS1601G – SFS1608G Taiwan Semiconductor 16A, 50V - 600V Super Fast Surface Mount Rectifier FEATURES ● Low forward voltage drop ● Ideal for automate

HY1606P/B N-Channel Enhancement Mode MOSFET Features • 60V/66A RDS(ON) = 10.4 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

Power F-MOS FETs 2SK1606 www.DataSheet4U.com Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q

isc N-Channel MOSFET Transistor 2SK1606 DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Minimum Lot-to-Lot variat

Power F-MOS FETs 2SK1606 www.DataSheet4U.com Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q

C3D16065D1 3rd Generation 650 V, 16 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky B

LMR51606, LMR51610 SLUSEY1B – JUNE 2023 – REVISED DECEMBER 2023 LMR516xx SIMPLE SWITCHER® Power Converter, 4-V to 65-V, 0.6-A/1-A Buck Converter in a

PCM1606 SLES014B – OCTOBER 2001 – REVISED AUGUST 2002 24-BIT, 192-kHz SAMPLING, 6-CHANNEL, ENHANCED MULTILEVEL, DELTA-SIGMA DIGITAL-TO-ANALOG CONVER

MSP16065V1 MSP16065V1 650V Silicon Carbide Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-F

VBMB1606 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.005 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 120 95 FEATURES • 1