1606 Datasheet | Specifications & PDF Download

LMR51606, LMR51610 SLUSEY1B – JUNE 2023 – REVISED DECEMBER 2023 LMR516xx SIMPLE SWITCHER® Power Converter, 4-V to 65-V, 0.6-A/1-A Buck Converter in a

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E6D16065A E-Series Automotive 650 V, 16 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schott

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SLG59M1606V Dual 4.5 A Load Switch  with Reverse Current Blocking General Description The SLG59M1606V is designed for load switching applicati

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JIEJIE MICROELECTRONICS CO. , Ltd JEER1606FPCT EPI SUPERFAST SOFT RECOVERY RECTIFIER Rev.1.3 DESCRIPTION  Plastic package has underwriters laborat

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E6D16065H E-Series Automotive 650 V, 16 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schott

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HY1606AP N-Channel Enhancement Mode MOSFET Features • • • • 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free

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MX25L8006E MX25L1606E MX25L8006E, MX25L1606E DATASHEET P/N: PM1548 1 REV. 1.2, JUL. 02, 2010 Free Datasheet http://www.datasheet-pdf.com/ MX25L80

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Ordering number:EN2535 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications

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GP1601 thru GP1607 ® GP1601 thru GP1607 Pb Free Plating Product Pb 16.0 Ampere Dual Common Cathode General Purpose Rectifier Diodes Features Glas

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Data Sheet 4.5 Ω RON, 16-Channel, Differential 8-Channel, ±5 V,+12 V,+5 V, and +3.3 V Multiplexers ADG1606/ADG1607 FEATURES 4.5 Ω typical on resista

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HY1606P/B N-Channel Enhancement Mode MOSFET Features • 60V/66A RDS(ON) = 10.4 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

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MX25L8006E MX25L1606E MX25L8006E, MX25L1606E DATASHEET P/N: PM1548 REV. 1.2, JUL. 02, 2010 1 MX25L8006E MX25L1606E Contents FEATURES

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VBM1606 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 5 m 120 A Single FEATURES • 175 °C Junctio

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C3D16065D1 3rd Generation 650 V, 16 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky B

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DATA SHEET www.onsemi.com Cost Effective Power Factor Controller NCP1606 The NCP1606 is an active power factor controller specifically designed for u

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C6D16065D 6th Generation 650 V, 16 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky B

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C3D16060D 3rd Generation 600 V, 16 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky B

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VBED1606 www.VBsemi.com N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Conf

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