MX25L8006E MX25L1606E MX25L8006E, MX25L1606E DATASHEET P/N: PM1548 1 REV. 1.2, JUL. 02, 2010 Free Datasheet http://www.datasheet-pdf.com/ MX25L80

HY1606AP N-Channel Enhancement Mode MOSFET Features • • • • 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free

MX25L8006E MX25L1606E MX25L8006E, MX25L1606E DATASHEET P/N: PM1548 REV. 1.2, JUL. 02, 2010 1 MX25L8006E MX25L1606E Contents FEATURES

LMR51606, LMR51610 SLUSEY1B – JUNE 2023 – REVISED DECEMBER 2023 LMR516xx SIMPLE SWITCHER® Power Converter, 4-V to 65-V, 0.6-A/1-A Buck Converter in a

Power F-MOS FETs 2SK1606 www.DataSheet4U.com Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q

Ordering number:EN2535 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications

isc N-Channel MOSFET Transistor 2SK1606 DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage- : VDSS=450V(Min) ·Minimum Lot-to-Lot variat

www.DataSheet4U.com HL1606 DESCRIPTION HL1606 is a LED driver IC with SPI controlled. We can get “complex mode changes” by fewer data. FEATURES NMOS

HY1606D/U/V Features • 60V/66A, RDS(ON)=10.4 m(typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoH

PCM1606 SLES014B – OCTOBER 2001 – REVISED AUGUST 2002 24-BIT, 192-kHz SAMPLING, 6-CHANNEL, ENHANCED MULTILEVEL, DELTA-SIGMA DIGITAL-TO-ANALOG CONVER

FEATURES • Balanced, transformer-like floating output • OutSmarts® technology improves clipping into single-ended loads • Stable driving long cables a

Ordering number:EN2535 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications

isc Silicon PNP Power Transistor 2SA1606 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V (Min) ·Large Current Capacity ·Compl

1.6x0.6mm RIGHT ANGLE SMD CHIP LED LAMP ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Part Number: APA1606ZGC

MSP16065V1 MSP16065V1 650V Silicon Carbide Diode Features -650-Volt Schottky Rectifier -Shorter recovery time -High-speed switching possible -High-F

APA1606MGC 1.6 x 0.6 mm Right Angle SMD Chip LED Lamp DESCRIPTIONS The Mega Green source color devices are made with AlGaInP on GaAs substrate Light E

Power F-MOS FETs 2SK1606 www.DataSheet4U.com Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q

APA1606SF4C-P22 1.6 x 0.6 mm Right Angle Infrared Emitting Diode DESCRIPTION z SF4 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. FEAT

APA1606VRBXF/A-5MAV 1.6 x 0.6 mm Right Angle SMD Chip LED Lamp DESCRIPTIONS The source color devices are made with InGaN Light Emitting Diode Electros