1606 Datasheet | Specifications & PDF Download

MX25L8006E MX25L1606E MX25L8006E, MX25L1606E DATASHEET P/N: PM1548 1 REV. 1.2, JUL. 02, 2010 Free Datasheet http://www.datasheet-pdf.com/ MX25L80

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HY1606AP N-Channel Enhancement Mode MOSFET Features • • • • 60V/60A, RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free

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MX25L8006E MX25L1606E MX25L8006E, MX25L1606E DATASHEET P/N: PM1548 REV. 1.2, JUL. 02, 2010 1 MX25L8006E MX25L1606E Contents FEATURES

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Ordering number:EN2535 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications

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www.DataSheet4U.com HIGH-VOLTAGE MIXED-SIGNAL IC 65COM x 132SEG Matrix LCD Controller-Driver DataSheet4U.com DataShee Product Specifications Vers

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LMR51606, LMR51610 SLUSEY1B – JUNE 2023 – REVISED DECEMBER 2023 LMR516xx SIMPLE SWITCHER® Power Converter, 4-V to 65-V, 0.6-A/1-A Buck Converter in a

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VBMB1606 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.005 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 120 95 FEATURES • 1

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Data Sheet 4.5 Ω RON, 16-Channel, Differential 8-Channel, ±5 V,+12 V,+5 V, and +3.3 V Multiplexers ADG1606/ADG1607 FEATURES 4.5 Ω typical on resista

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HY1606P/B N-Channel Enhancement Mode MOSFET Features • 60V/66A RDS(ON) = 10.4 m(typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

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Freescale Semiconductor Data Sheet: Technical Data Document Number: MMA16xxNKW Rev. 4, 03/2012 DSI Inertial Sensor The MMA16xxNKW family, a SafeAssu

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C3D16065D1 3rd Generation 650 V, 16 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky B

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HY1606D/U/V Features • 60V/66A, RDS(ON)=10.4 m(typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoH

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HY1606D/U/V Features • 60V/66A, RDS(ON)=10.4 m(typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoH

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UT16005CT THRU UT1608CT 16A High Power Ultra Fast Rectifiers ■ Features • Dual rectifier construction, positive centetap, offer 8.0A half wave and 16

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HER1601C thru HER1607C .129(3.3)  .1(2.54)    .403(10.26) .385(9.8) .624(15.87). .578(14.7)    .153(3.9) .145(3.7)  .251(6.4)  .228(5.8)  .189(4

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Ordering number:EN2535 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications

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HER1601 THRU HER1606 16 A Glass Passivated High Efficiency Rectifiers UPM Voltage Range 50 to 600 Volts Current 16.0 Amperes Features TO-220 * L

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GP1601 thru GP1607 ® GP1601 thru GP1607 Pb Free Plating Product Pb 16.0 Ampere Dual Common Cathode General Purpose Rectifier Diodes Features Glas

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