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16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 Histo

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INTEGRATED CIRCUITS XA-S3 XA 16-bit microcontroller 32 K/1 K OTP/ROM/ROMless, 8-channel 8-bit A/D, low voltage (2.7 V–5.5 V), I2C, 2 UARTs, 16 MB add

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E ES S II - Preliminary Excel Semiconductor inc. ES29LV160D 16Mbit(2M x 8/1M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory - Preliminary Draft

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www.DataSheet4U.com ee DataSh DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com m et4U.co ee DataSh DataSheet4U.com Data

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www.DataSheet4U.com K6F1616U6C Family CMOS SRAM 16Mb(1M x 16 bit) Low Power SRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG P

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IS66WVC1M16ALL IS67WVC1M16ALL 16Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC1M16ALL and IS67WVC1M16ALL is an integrated memory device cont

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R1LV1616R Series 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a fami

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R1LV1616R Series 16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) REJ03C0101-0400Z Rev.4.00 2007.09.12 Description The R1LV1616R Series is a fami

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16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 Histo

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16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 Histo

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16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 Histo

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16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 Histo

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16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 Histo

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16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 Histo

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16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 Histo

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TENTATIVE CompactFlash™ Card Preliminary THNCFxxxMBA/BAI Series TOSHIBA SMALL FORM FACTOR CARD DESCRIPTION The THNCFxxxMBA/BAI series CompactFlash

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19-5614; Rev 11/10 www.maxim-ic.com DS1270W 3.3V 16Mb Nonvolatile SRAM FEATURES  Five years minimum data retention in the absence of external powe

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S26KL512S, S26KS512S, S26KL256S, S26KS256S, S26KL128S, S26KS128S 512 Mb (64 MB) / 256 Mb (32 MB) / 128 Mb (16 MB) HYPERFLASH™ family HYPERBUS™, 3.0 V

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S26KL512S, S26KS512S, S26KL256S, S26KS256S, S26KL128S, S26KS128S 512 Mb (64 MB) / 256 Mb (32 MB) / 128 Mb (16 MB) HYPERFLASH™ family HYPERBUS™, 3.0 V

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LH28Fxxx FLASH MEMORY FLASH NON-VOLATILE MEMORY FLASH E2ROM FLASH ROM READ ONLY MEMORY ETOX LH28F016SUHT-10 16M (1M x 16/2M x 8)

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