1932 Datasheet | Specifications & PDF Download

MDP1932– Single N-Channel Trench MOSFET 80V MDP1932 Single N-channel Trench MOSFET 80V, 120A, 3.4mΩ General Description The MDP1932 uses advanced Ma

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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1932 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1932 Unit: mm • High trans

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19-2555; Rev 1; 12/02 Digitally Controlled, 0.5% Accurate, Safest APD Bias Supply General Description The MAX1932 generates a low-noise, high-voltage

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OV2722/OV2222 datasheet PRODUCT SPECIFICATION 1/5.8 CMOS 2 megapixel (1932 x 1092) image sensor with OmniBSI+™ technology OV2722/OV2222 color CMOS

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OV2722/OV2222 datasheet PRODUCT SPECIFICATION 1/5.8 CMOS 2 megapixel (1932 x 1092) image sensor with OmniBSI+™ technology OV2722/OV2222 color CMOS

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OV2720 datasheet PRODUCT SPECIFICATION 1/5.8 CMOS 2 megapixel (1932 x 1092) image sensor with OmniBSI™ technology OV2720 color CMOS 2 megapixel (1

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TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1932 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1932 Unit: mm • High trans

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FEATURES s Up to 80% Efficiency s Inherently Matched LED Current s Adjustable Control of LED Current s Drives Five White LEDs from 2V s Drives Six Whi

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www.DataSheet4U.com 36.15 MHz Filter for Broadband Access Applications Part Number SF0036BA11932S Micro Networks., 324 Clark Street, Worcester, MA 0

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain- : hFE= 1000

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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1932 DESCRIPTION ·High collector breakdown voltage ·Complementary to 2SC5174 ·100% avalan

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3.3V MULTIMEDIA FIFO 16 BIT V-III, 32 BIT Vx-III FAMILY UP TO 1 Mb DENSITY IDT72V15160 IDT72V16160 IDT72V17160 IDT72V18160 IDT72V19160 IDT72V14320 I

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PAC1931/2/3/4 Single/Multi-Channel DC Power/Energy Monitor with Accumulator Features • High-Side Current Monitor with One, Two, Three or Four Channe

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MDE1932– Single N-Channel Trench MOSFET 80V MDE1932 Single N-channel Trench MOSFET 80V, 120A, 3.4mΩ General Description Features The MDE1932 uses

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Alfa-MOS Technology General Description AFN1932E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

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NTE1932 Integrated Circuit 3–Terminal Positive Voltage Regulator, 10V, 1A The NTE1932 fixed–voltage regulator is a monolithic integrated circuit in a

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www.DataSheet4U.com AS Color TV Owner’s Manual Manuel d’instructions du télécouleur Color TV Manual Del Propietario DS13310 DS19310 Welcome to the W

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www.DataSheet4U.com AS Color TV Owner’s Manual Manuel d’instructions du télécouleur Color TV Manual Del Propietario DS13310 DS19310 Welcome to the W

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LAST UPDATED: March 12, 2001 L1932 MINIATURE BARRIER STRIP A ten way barrier type terminal block which can easily be sub-divided if required. It has

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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