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AFN1932

N-Channel MOSFET

AFN1932 Features

* 30V/1.5A,RDS(ON)=430mΩ@VGS=4.5V 30V/1.2A,RDS(ON)=580mΩ@VGS=2.5V 30V/0.6A,RDS(ON)=860mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-363 package design Application Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Batter

AFN1932 General Description

AFN1932, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial.

AFN1932 Datasheet (571.13 KB)

Preview of AFN1932 PDF

Datasheet Details

Part number:

AFN1932

Manufacturer:

Alfa-MOS

File Size:

571.13 KB

Description:

N-channel mosfet.

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TAGS

AFN1932 N-Channel MOSFET Alfa-MOS

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