AFN1998S Datasheet, Mosfet, Alfa-MOS

AFN1998S Features

  • Mosfet 100V/10A,RDS(ON)= 21mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) TO-263-2L package design Application DC/DC Primary Side Switch POL Synchronous buck converter L

PDF File Details

Part number:

AFN1998S

Manufacturer:

Alfa-MOS

File Size:

550.60kb

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📄 Datasheet

Description:

N-channel enhancement mode mosfet. AFN1998S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These dev

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AFN1998S Application

  • Applications Pin Description ( TO-263-2L ) Features 100V/10A,RDS(ON)= 21mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) TO-26

TAGS

AFN1998S
N-Channel
Enhancement
Mode
MOSFET
Alfa-MOS

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