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AFN1998S, AFN1998S-Alfa Datasheet - Alfa-MOS

AFN1998S N-Channel Enhancement Mode MOSFET

AFN1998S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN1998S Features

* 100V/10A,RDS(ON)= 21mΩ@VGS=10V Super high density cell design for extremely low RDS (ON) TO-263-2L package design Application DC/DC Primary Side Switch POL Synchronous buck converter LED Backlight for LCD TV ndustrial Pin Define Pin 1 2 3 Symbol G S D Ordering Information Part Ordering No. Pa

AFN1998S-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFN1998S, AFN1998S-Alfa. Please refer to the document for exact specifications by model.
AFN1998S Datasheet Preview Page 2 AFN1998S Datasheet Preview Page 3

Datasheet Details

Part number:

AFN1998S, AFN1998S-Alfa

Manufacturer:

Alfa-MOS

File Size:

550.60 KB

Description:

N-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN1998S, AFN1998S-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN1998S AFN1998S-Alfa N-Channel Enhancement Mode MOSFET Alfa-MOS

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