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AFN1912

N-Channel MOSFET

AFN1912 Features

* 20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=580mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-363 package design Application Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Batter

AFN1912 General Description

AFN1912, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial.

AFN1912 Datasheet (596.75 KB)

Preview of AFN1912 PDF

Datasheet Details

Part number:

AFN1912

Manufacturer:

Alfa-MOS

File Size:

596.75 KB

Description:

N-channel mosfet.

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TAGS

AFN1912 N-Channel MOSFET Alfa-MOS

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