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AFN1932E, AFN1932E-Alfa N-Channel MOSFET

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Description

Alfa-MOS Technology General .
AFN1932E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

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This datasheet PDF includes multiple part numbers: AFN1932E, AFN1932E-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AFN1932E, AFN1932E-Alfa
Manufacturer
Alfa-MOS
File Size
353.00 KB
Datasheet
AFN1932E-Alfa-MOS.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: AFN1932E, AFN1932E-Alfa.
Please refer to the document for exact specifications by model.

Features

* 30V/1.8A,RDS(ON)=450mΩ@VGS=4.5V
* 30V/1.5A,RDS(ON)=600mΩ@VGS=2.5V
* Low Offset (Error) Voltage
* Low-Voltage Operation
* High-Speed Circuits
* Low Battery Voltage Operation
* ESD Protected

AFN1932E Distributors

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