RV24AF-10-40R1-B1MEG (ALPHA)
Potentiometer
Date: 08/07/08
Ref.#: TW-700187
Potentiometer 31VA Series 31VC Series 31VJ Series
.453 .256
*
ø.945
M8 x .75mm
.472 30°
Dimensions (In.) (exce
(3 views)
LE28C1001T-12 (Sanyo Semicon Device)
1MEG (131072 words x 8 bits) Flash Memory
Ordering number : EN*5129A
CMOS LSI
LE28C1001M, T-90/12/15
1MEG (131072 words × 8 bits) Flash Memory
Preliminary Overview
The LE28C1001M, T series I
(2 views)
LE28CV1001M (Sanyo Semicon Device)
1MEG (131072 words x 8 bits) Flash Memory
Ordering number : EN*5409
CMOS LSI
LE28CV1001M, T-12/15
1MEG (131072 words × 8 bits) Flash Memory
Overview
The LE28CV1001M, T Series ICs are 1 MEG
(2 views)
LC338128M (Sanyo)
1MEG (131072 WORDS X 8BITS) PSEUDO-SRAM
(2 views)
LC338128P (Sanyo)
1MEG (131072 WORDS X 8BITS) PSEUDO-SRAM
(2 views)
LC338128PL (Sanyo)
1MEG (131072 WORDS X 8BITS) PSEUDO-SRAM
(2 views)
EDI7F33IMC (EDI)
1Megx32 Flash Module
www.DataSheet4U.com
EDI7F33IMC
1Megx32
1Megx32 Flash Module
The EDI7F33IMC and EDI7F2331MC are organized as one and two banks of 1 meg x 32 respecti
(2 views)
EN27C010 (EON)
1Megabit EPROM
www.DataSheet4U.com
EN27C010
EN27C010 1Megabit EPROM (128K x 8)
FEATURES
• Fast Read Access Time : -45, -55, -70, and -90ns • Single 5V Power Supply
(2 views)
EM636165-XXI (Etron Technology)
1Mega x 16 Synchronous DRAM
EtronTech
Features
• • • • • • Fast access time: 5/5.5/6.5/7.5 ns Fast clock rate: 166/143/125/100 MHz Self refresh mode: standard and low power Inter
(2 views)
LE28C1001M (Sanyo Semicon Device)
1MEG (131072 words x 8 bits) Flash Memory
Ordering number : EN*5129A
CMOS LSI
LE28C1001M, T-90/12/15
1MEG (131072 words × 8 bits) Flash Memory
Preliminary Overview
The LE28C1001M, T series I
(1 views)
LE28C1001T (Sanyo Semicon Device)
1MEG (131072 words x 8 bits) Flash Memory
Ordering number : EN*5129A
CMOS LSI
LE28C1001M, T-90/12/15
1MEG (131072 words × 8 bits) Flash Memory
Preliminary Overview
The LE28C1001M, T series I
(1 views)
LE28C1001T-15 (Sanyo Semicon Device)
1MEG (131072 words x 8 bits) Flash Memory
Ordering number : EN*5129A
CMOS LSI
LE28C1001M, T-90/12/15
1MEG (131072 words × 8 bits) Flash Memory
Preliminary Overview
The LE28C1001M, T series I
(1 views)
LE28C1001T-90 (Sanyo Semicon Device)
1MEG (131072 words x 8 bits) Flash Memory
Ordering number : EN*5129A
CMOS LSI
LE28C1001M, T-90/12/15
1MEG (131072 words × 8 bits) Flash Memory
Preliminary Overview
The LE28C1001M, T series I
(1 views)
LE28CV1001T (Sanyo Semicon Device)
1MEG (131072 words x 8 bits) Flash Memory
Ordering number : EN*5409
CMOS LSI
LE28CV1001M, T-12/15
1MEG (131072 words × 8 bits) Flash Memory
Overview
The LE28CV1001M, T Series ICs are 1 MEG
(1 views)
LE28CV1001T-12 (Sanyo Semicon Device)
1MEG (131072 words x 8 bits) Flash Memory
Ordering number : EN*5409
CMOS LSI
LE28CV1001M, T-12/15
1MEG (131072 words × 8 bits) Flash Memory
Overview
The LE28CV1001M, T Series ICs are 1 MEG
(1 views)
LE28CV1001T-15 (Sanyo Semicon Device)
1MEG (131072 words x 8 bits) Flash Memory
Ordering number : EN*5409
CMOS LSI
LE28CV1001M, T-12/15
1MEG (131072 words × 8 bits) Flash Memory
Overview
The LE28CV1001M, T Series ICs are 1 MEG
(1 views)
EM637327 (Etron Technology Inc.)
1Mega x 32 SGRAM
EtronTech
Features
• • • • • •
EM637327
1Mega x 32 SGRAM
Preliminary (08/99)
Pin Assignment (Top View)
DQ29 VSSQ DQ30 DQ31 VSS NC NC NC NC NC NC NC
(1 views)
EDI7F34IMC (EDI)
1Megx32 Flash Module
www.DataSheet4U.com
EDI7F34IMC
1Megx32
1Megx32 Flash Module
The EDI7F34IMC and EDI7F2341MC are organized as one and two banks of 1 Meg x 32 respecti
(1 views)
IS41LV4100 (Integrated Silicon Solution)
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C4100 IS41LV4100
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
FEATURES
• TTL compatible inputs and outputs • Refresh Interval: 1024 cycles/16
(1 views)
IS41C4100 (Integrated Silicon Solution)
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
IS41C4100 IS41LV4100
1Meg x 4 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
FEATURES
• TTL compatible inputs and outputs • Refresh Interval: 1024 cycles/16
(1 views)