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LE28C1001T-12 - 1MEG (131072 words x 8 bits) Flash Memory

Datasheet Summary

Features

  • Highly reliable 2-layer polysilicon CMOS flash EEPROM process.
  • Read and write operations using a 5 V single-voltage power supply.
  • Fast access time: 90, 120, and 150 ns.
  • Low power dissipation.
  • Operating current (read): 30 mA (maximum).
  • Standby current: 20 µA (maximum).
  • Highly reliable read/write.
  • Erase/write cycles: 104/103 cycles.
  • Data retention: 10 years.
  • Address and data latches.
  • Fast page rewri.

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Datasheet preview – LE28C1001T-12

Datasheet Details

Part number LE28C1001T-12
Manufacturer Sanyo Semicon Device
File Size 281.06 KB
Description 1MEG (131072 words x 8 bits) Flash Memory
Datasheet download datasheet LE28C1001T-12 Datasheet
Additional preview pages of the LE28C1001T-12 datasheet.

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Full PDF Text Transcription

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Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG (131072 words × 8 bits) Flash Memory Preliminary Overview The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 5 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power dissipation, and ease of use. A 128-byte page rewrite function provides rapid data rewriting.
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