* Highly reliable 2-layer polysilicon CMOS flash EEPROM process
* Read and write operations using a 5 V single-voltage power supply
* Fast access time: 90, 120, and 150 ns
* Low power dissipation
* Operating current (read): 30 mA (maximum)
* Standby cu
LE28C1001T-12 Datasheet (281.06 KB)
LE28C1001T-12
Sanyo Semicon Device
281.06 KB
1meg (131072 words x 8 bits) flash memory.
Ordering number : EN
*5129A
CMOS LSI
LE28C1001M, T-90/12/15
1MEG (131072 words × 8 bits) Flash Memory
Preliminary Overview
The LE28C1001M, T seri.
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