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LE28CV1001T - 1MEG (131072 words x 8 bits) Flash Memory

Product Overview

Sanyo Semicon Device

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LE28CV1001T 1MEG (131072 words x 8 bits) Flash Memory by Sanyo Semicon Device - Datasheet Preview — Datasheet preview – LE28CV1001T

Datasheet Details

Part number	LE28CV1001T
Manufacturer	Sanyo Semicon Device
File Size	276.77 KB
Description	1MEG (131072 words x 8 bits) Flash Memory
Datasheet	LE28CV1001T Datasheet
Additional preview pages of the LE28CV1001T datasheet.

Product details

Features

Highly reliable 2-layer polysilicon CMOS flash EEPROM process.
Read and write operations using a 5 V single-voltage power supply.
Fast access time: 120 and 150 ns.
Low power dissipation.
Operating current (read): 12 mA (maximum).
Standby current: 15 µA (maximum).
Highly reliable read/write.
Erase/write cycles: 104/103 cycles.
Data retention time: 10 years.
Address and data latches.
Fast page rewrite.

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Other Datasheets by Sanyo Semicon Device

LE28CV1001T-12 - 1MEG (131072 words x 8 bits) Flash Memory
LE28CV1001T-15 - 1MEG (131072 words x 8 bits) Flash Memory
LE28CV1001M - 1MEG (131072 words x 8 bits) Flash Memory
LE28C1001M - 1MEG (131072 words x 8 bits) Flash Memory
LE28C1001T - 1MEG (131072 words x 8 bits) Flash Memory
LE28C1001T-12 - 1MEG (131072 words x 8 bits) Flash Memory

Published: Mar 22, 2005 |