LE28CV1001T Datasheet - Sanyo Semicon Device

LE28CV1001T - 1MEG (131072 words x 8 bits) Flash Memory

LE28CV1001T Features

* Highly reliable 2-layer polysilicon CMOS flash EEPROM process

* Read and write operations using a 5 V single-voltage power supply

* Fast access time: 120 and 150 ns

* Low power dissipation

* Operating current (read): 12 mA (maximum)

* Standby current

Datasheet Details

LE28CV1001T

Sanyo Semicon Device

276.77 KB

1meg (131072 words x 8 bits) flash memory.

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