* Highly reliable 2-layer polysilicon CMOS flash EEPROM process
* Read and write operations using a 5 V single-voltage power supply
* Fast access time: 120 and 150 ns
* Low power dissipation
* Operating current (read): 12 mA (maximum)
* Standby current
LE28CV1001T-15 Datasheet (276.77 KB)
LE28CV1001T-15
Sanyo Semicon Device
276.77 KB
1meg (131072 words x 8 bits) flash memory.
Ordering number : EN
*5409
CMOS LSI
LE28CV1001M, T-12/15
1MEG (131072 words × 8 bits) Flash Memory
Overview
The LE28CV1001M, T Series ICs are 1 .
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